Evolution of Atomically Stepped Surface of Indium Tin Oxide Thin Films Grown on Nanoimprinted Glass Substrates

Abstract

Indium tin oxide (ITO) thin films were deposited on atomically stepped glass substrates (step height of ∼0.2 nm and separation of ∼80 nm) by pulsed laser deposition. The atomically stepped glass was prepared via thermal nanoimprint using an atomically stepped sapphire mold. The surface morphology of the ITO thin film definitely reflected the atomically stepped pattern of the glass substrate surface. The step height and the separation of the ITO film surface were close to those of the nanoimprinted glass surface. The fast Fourier transform analysis of the atomic force microscopy image also confirmed the periodicity of the atomic-step pattern.

Sub-nanoscale nanoimprint fabrication of atomically stepped glassy substrates of silicate glass and acryl polymer

“…These glassy substrates of silicate glasses and polymers have the excellent formability under the appropriate thermal conditions [1,5]. The microscale or nanoscale surface morphology of the glassy substrates has an important role to control the device performance [7]. Among the surface microprocesses, the nanoimprinting process is one of the most promising techniques for simple, low-cost, and highthroughput nanopatterning [8,9].…”

Influence of Rapid Thermal Annealing and Substrate Terrace Width on Self-Organizing Formation of Periodic Straight Nanogroove Array on NiO(111) Epitaxial Thin Film

“…Nanopatterning techniques are the subject of intensive research in many diverse areas of nanotechnology. [1][2][3][4][5][6][7][8] Artificial nanostructural construction has been conducted by employing various methods such as extreme ultraviolet interference lithography, 9) nanoimprint lithography, [10][11][12][13][14][15] and high speed scanning CW laser method. 16) Recently, nanotechnology using self-organizing phenomena has been attracting much attention owing to its low-cost and applicability for large-scale patterning.…”

Characterization and study of high conductivity antimony-doped tin oxide thin films grown by mist chemical vapor deposition

“…1,2 Especially the tin related oxide thin lms, such as indium tin oxide (In 2 O 3 : SnO 2 = 9 : 1); ITO, uorine doped tin oxide (SnO 2 : F); FTO, and antimony doped tin oxide (SnO 2 : Sb); ATO, exhibit lower resistivity (10 −3 to 10 −4 U cm) and higher transmittance (>80%) in the visible region (390-780 nm). [3][4][5] Among these tin related oxide lms, ATO is a candidate doping material with the potential to be studied because the Sb precursor is usually chemically-stable, earthabundant and non-toxic. 6,7 However, compared with ITO and FTO lms, which have been obtained easily with low resistivity of ∼10 −4 U cm, the higher resistivity limits the wide application of ATO lms in many elds.…”