A study was conducted on the effects of microstructure, atmosphere, and several dopants on the electrical conductivity of bismuth titanate (Bi4Ti3O12, BIT). Increased grain size increased the conductivity in undoped BIT as did acceptor dopants that substituted for either Bi (Ca and Sr) or Ti (Fe). A donor dopant (Nb) decreased the conductivity in BIT by as much as 3 orders of magnitude. The increased resistivity of Nb‐doped BIT improved the polarization in an electric field. A piezoelectric coefficient, d33, of 20.0 pC/N was achieved with a Nb‐doped BIT composition corresponding to Bi4Ti2.86 Nb0.14 O12.
Microstructure, Electrical Conductivity, and Piezoelectric Properties of Bismuth Titanate.-The effects of the microstructure and dopants on the conductivity of bismuth titanate, Bi4Ti3O12 (BIT) are studied with regard to the development of a high temp. piezoelectric ceramic. Below Tc, coarse-grained BIT shows a higher conductivity than the fine-grained material. By addition of acceptor dopants such as Ca and Sr substituting for Bi or Fe substituting for Ti, the conductivity also increases, whereas a donor dopant (Nb) causes a decrease of the conductivity up to 3 orders of magnitude. The highest piezoelectric coefficient d33 = 20.0 pC/N is observed for Bi4Ti2.86Nb0.14O12. -(SHULMAN, H. S.; TESTORF, M.; DAMJANOVIC, D.; SETTER, N.; J.
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