Operating power MOSFET devices at frequencies over 1MHz will pose significant challenges to established power electronic packages such as the D2-Pak and wirebonded SO-8 devices.In this paper the high frequency parasitic impedances of a range of power electronic packages are presented. Results show that a source mounted power package technology based upon a copper clip type assembly has considerably lower parasitic impedance compared to conventional power packaging at frequencies in the range of 500KHz to over 1MHz.The resistance of conventional packages recorded over this range of frequencies increases significantly as the frequency approaches 1Mhz. This is expected to be a result of skin effect related phenomena occurring in wire bonds and package leads. Package impedance data up to frequencies of 5MHz will be presented for a range of packages along with efficiency data recorded from devices operating in multi-phase buck converter circuits.
Abstract-High power compact IGBT half bridge modules with a current rating of 300A and a blocking voltage of 650V using ultra thin IGBTs and diodes have been successfully developed with double-sided cooling capability. The wirebond-less package building block called COOLiR 2 DIE TM has a small area of 28.5 mm x 16 mm with a power rating 200 kVA, This is the most compact IGBT package reported today. A low on-state voltage of 1.6V at 300A is achieved in the wirebond-less package. The combination of lower on-state voltage and larger heat exchange area due to the solderable front metal (SFM), increases the IGBT module current carrying capability by 30%.
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