A dynamic pulsed plasma reactor (DPPR) capable of chemical vapor deposition of advanced materials on substrates located in a supersonic expansion nozzle is described. The DPPR combines plasma, shock tube, and supersonic expansion nozzle techniques in obtaining vapor phase quenching rates of 107–108 K/s for nanometric particle size formation. Deposition of Ti(s) and TiN(s) from Ar–TiCl4, Ar–H2–TiCl4, and N2–H2–TiCl4 reactants were experimentally investigated with deposition products characterized by scanning electron microscopy, atomic force microscopy, and energy dispersive x-ray analytical techniques. Theoretical gas dynamics describing wave motion and propagation of reactants in the DPPR are presented and resulted in identifying deposition mechanisms of homogeneous and heterogeneous nucleation for Ti(s) and TiN(s) on Pyrex substrates, respectively. This article describes reactor design, operating characteristics, and theoretical wave dynamics in the experimental system.
A microwave compatible electromagnetic valve capable of discharging saturated vapors in vacuum for shock wave formation and subsequent pulsed plasma deposition is presented. The valve discharges vapors of 1–5 atm and 75 °C with open duration times of 36–178 μs into vacuum. A theoretical model describing rarefaction wave motion coupled with a valve dynamic model was used to determine critical open duration time required for driving a shock wave in the experimental system. Valve design, operating characteristics, and rarefaction wave dynamics for H2, He, Ar, and CO2 internal to the valve are described.
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