This paper describes an experimentally simple system for measuring rates of electron transport across organic thin films having a range of molecular structures. The system uses a metal--insulator--metal junction based on self-assembled monolayers (SAMs); it is particularly easy to assemble. The junction consists of a SAM supported on a silver film (Ag-SAM(1)) in contact with a second SAM supported on the surface of a drop of mercury (Hg-SAM(2))--that is, a Ag-SAM(1)SAM(2)-Hg junction. SAM(1) and SAM(2) can be derived from the same or different thiols. The current that flowed across junctions with SAMs of aliphatic thiols or aromatic thiols on Ag and a SAM of hexadecane thiol on Hg depended both on the molecular structure and on the thickness of the SAM on Ag: the current density at a bias of 0.5 V ranged from 2 x 10(-10) A/cm(2) for HS(CH(2))(15)CH(3) on Ag to 1 x 10(-6) A/cm(2) for HS(CH(2))(7)CH(3) on Ag, and from 3 x 10(-6) A/cm(2) for HS(Ph)(3)H (Ph = 1,4-C(6)H(4)) on Ag to 7 x 10(-4) A/cm(2) for HSPhH on Ag. The current density increased roughly linearly with the area of contact between SAM(1) and SAM(2), and it was not different between Ag films that were 100 or 200 nm thick. The current--voltage curves were symmetrical around V = 0. The current density decreased with increasing distance between the electrodes according to the relation I = I(0)e(-beta d(Ag,Hg)), where d(Ag,Hg) is the distance between the electrodes, and beta is the structure-dependent attenuation factor for the molecules making up SAM(1). At an applied potential of 0.5 V, beta was 0.87 +/- 0.1 A(-1) for alkanethiols, 0.61 +/- 0.1 A(-1) for oligophenylene thiols, and 0.67 +/- 0.1 A(-1) for benzylic derivatives of oligophenylene thiols. The values of beta did not depend significantly on applied potential over the range of 0.1 to 1 V. These junctions provide a test bed with which to screen the intrinsic electrical properties of SAMs made up of molecules with different structures; information obtained using these junctions will be useful in correlating molecular structure and rates of electron transport.

Electron tunneling through self-assembled monolayers (SAMs) composed of either unsaturated or saturated molecules was investigated using conducting probe atomic force microscopy (CP-AFM). SAMs of unsaturated oligophenylene thiolates or saturated alkanethiolates were assembled on Au substrates and contacted with a Au-coated AFM tip at constant applied load. The current−voltage (I−V) characteristics of both types of SAMs were linear over ±0.3 V. Resistance (R) increased exponentially with molecular length (s) in both cases according to the expected relationship, R = R 0 exp(βs), but the rate of increase, as quantified by the structure-dependent factor β, was much less for the unsaturated SAMs than for the saturated alkanethiolate SAMs. Average β values were 0.42 ± 0.07 Å-1 for the oligophenylene thiolate SAMs and 0.94 ± 0.06 Å-1 for the alkanethiolate SAMs. Extrapolation of semilog plots of resistance versus molecular length to zero length yielded an estimate of the metal−molecule contact resistance, which was 104 Ω for a 50 nm radius Au-coated tip in contact with either the oligophenylene thiolates or alkanethiolates. This study establishes that CP-AFM can be used to probe transport in molecular junctions as a function of molecular dimensions and structure.

This paper compares the structural and electrical characteristics of self-assembled monolayers (SAMs) of n-alkanethiolates, SCn (n = 10, 12, 14), on two types of silver substrates: one used as-deposited (AS-DEP) by an electron-beam evaporator, and one prepared using the method of template-stripping. Atomic force microscopy showed that the template-stripped (TS) silver surfaces were smoother and had larger grains than the AS-DEP surfaces, and reflectance-absorbance infrared spectroscopy showed that SAMs formed on TS substrates were more crystalline than SAMs formed on AS-DEP substrates. The range of current densities, J (A/cm2), measured through mercury-drop junctions incorporating a given SAM on AS-DEP silver was, on average, several orders of magnitude larger than the range of J measured through the same SAM on TS silver, and the AS-DEP junctions failed, on average, 3.5 times more often within five current density-voltage (J-V) scans than did TS junctions (depending on the length of the alkyl chains of the molecules in the SAM). The apparent log-normal distribution of J through the TS junctions suggests that, in these cases, it is the variability in the effective thickness of the insulating layer (the distance the electron travels between electrodes) that results in the uncertainty in J. The parameter describing the decay of current density with the thickness of the insulating layer, beta, was either 0.57 A-1 at V = +0.5 V (calculated using the log-mean of the distribution of values of J) or 0.64 A-1 (calculated using the peak of the distribution of values of J) for the TS junctions; the latter is probably the more accurate. The mechanisms of failure of the junctions, and the degree and sources of uncertainty in current density, are discussed with respect to a variety of defects that occur within Hg-drop junctions incorporating SAMs on silver.

Photochromic systems can convert light energy into mechanical energy, thus they can be used as building blocks for the fabrication of prototypes of molecular devices that are based on the photomechanical effect. Hitherto a controlled photochromic switch on surfaces has been achieved either on isolated chromophores or within assemblies of randomly arranged molecules. Here we show by scanning tunneling microscopy imaging the photochemical switching of a new terminally thiolated azobiphenyl rigid rod molecule. Interestingly, the switching of entire molecular 2D crystalline domains is observed, which is ruled by the interactions between nearest neighbors. This observation of azobenzenebased systems displaying collective switching might be of interest for applications in high-density data storage.scanning tunnel microscopy ͉ molecular switches ͉ photochromic system ͉ data storage

Articles you may be interested inAdvanced high-k dielectric amorphous LaGdO3 based high density metal-insulator-metal capacitors with subnanometer capacitance equivalent thickness Appl. Phys. Lett. 102, 252905 (2013); 10.1063/1.4812670 Electron-beam-induced alteration of the dielectric properties of sandwiched self-assembled organic monolayers Low temperature crystallization of high permittivity Ta oxide using an Nb oxide thin film for metal/insulator/metal capacitors in dynamic random access memory applications J. Vac. Sci. Technol. B 23, 80 (2005); 10.1116/1.1829060 Temperature dependence of the dielectric response of anodized Al-Al 2 O 3 -metal capacitors

One of the main goals of molecular electronics is to achieve electronic functions from devices consisting of tailored organic molecules connecting two metal electrodes. The fabrication of nanometre-scale spaced electrodes still results in expensive, and often scarcely reproducible, devices. On the other hand, the 'conductance' of long organic molecules--generally dominated by the tunnelling mechanism--is very poor. Here, we show that by incorporating a large number of metal centres into rigid molecular backbones we can obtain very long (up to 40 nm) and highly 'conductive' molecular wires. The metal-centre molecular wires are assembled in situ on metal surfaces via a sequential stepwise coordination of metal ions by terpyridine-based ligands. They form highly ordered molecular films of elevated mechanical robustness. The electrical properties, characterized by a junction based on Hg electrodes, indicate that the 'conductance' of these metal-centre molecular wires does not decrease significantly even for very long molecular wires, and depends on the nature of the incorporated redox centre. The outstanding electrical and mechanical characteristics of these easy-to-assemble molecular systems open the door to a new generation of molecular wires, able to bridge large-gap electrodes, and to form robust films for organic electronics.

An electrical junction formed by mechanical contact between two self-assembled monolayers (SAMs)sa SAM formed from an dialkyl disulfide with a covalently linked tetracyanoquinodimethane group that is supported by silver (or gold) and a SAM formed from an alkanethiolate SAM that is supported by mercurysrectifies current. The precursor to the SAM on silver (or gold) was bis(20-(2-((2,5-cyclohexadiene-1,4-diylidene)dimalonitrile))decyl)) disulfide and that for the SAM on mercury was HS(CH2)n-1CH3 (n ) 14, 16, 18). The electrical properties of the junctions were characterized by current-voltage measurements. The ratio of the conductivity of the junction in the forward bias (Hg cathodic) to that in the reverse bias (Hg anodic), at a potential of 1 V, was 9 ( 2 when the SAM on mercury was derived from HS(CH2)15CH3. The ratio of the conductivity in the forward bias to that in the reverse bias increased with decreasing chain length of the alkanethiol used to form the SAM on mercury. These results demonstrate that a single redox center asymmetrically placed in a metal-insulator-metal junction can cause the rectification of current and indicate that a fixed dipole in the insulating region of a metal-insulator-metal junction is not required for rectification.

Conductance switching associated with the photoisomerization of azobenzene-based (Azo) molecules was observed in nanoscopic metal-molecule-metal junctions. The junctions were formed by using a conducting atomic force microscope (C-AFM) approach, where a metallic AFM tip was used to electrically contact a gold-supported Azo self-assembled monolayer. The measured 30-fold increase in conductance is consistent with the expected decrease in tunneling barrier length resulting from the conformational change of the Azo molecule.