In this paper we present an extensive theoretical and numerical analysis of monolithic high-index contrast grating, facilitating simple manufacture of compact mirrors for very broad spectrum of vertical-cavity surface-emitting lasers (VCSELs) emitting from ultraviolet to mid-infrared. We provide the theoretical background explaining the phenomenon of high reflectance in monolithic subwavelength gratings. In addition, by using a three-dimensional, fully vectorial optical model, verified by comparison with the experiment, we investigate the optimal parameters of high-index contrast grating enabling more than 99.99% reflectance in the diversity of photonic materials and in the broad range of wavelengths.

In this Letter a fully vectorial numerical model is used to search for the construction parameters of monolithic high-contrast grating (MHCG) mirrors providing maximal power reflectance. We determine the design parameters of highly reflecting MHCG mirrors where the etching depth of the stripes is less than two wavelengths in free space. We analyze MHCGs in a broad range of real refractive index values corresponding to most of the common optoelectronic materials in use today. Our results comprise a complete image of possible highly reflecting MHCG mirror constructions for potential use in optoelectronic devices and systems. We support the numerical analysis by experimental verification of the high reflectance via a GaAs MHCG designed for a wavelength of 980 nm.

No abstract

No abstract

Dilute nitride (DN) vertical cavity surface emitting lasers (VCSELs) emitting near 1300 nm exhibit state-of-the-art performance including bandwidths of 10 GHz and a record high error-free data transmission of 12 Gbps. Renewed interest in DN VCSELs stems from emerging applications in kilometer-reach digital communication across optical fiber and across free space via eye safe beams, time-of-flight and structured light sensing, and photonic-electronic integrated circuit optical interconnects. We produce VCSEL wafers in a production molecular beam epitaxy system on 3- and 4-inch diameter GaAs wafers. We report record dynamic performance for our test VCSELs with oxide aperture diameters ranging from 2 to 12 µm.

Semiconductor-metal subwavelength grating (SMSG) can serve a dual purpose in vertical-cavity surface-emitting lasers (VCSELs), as both optical coupler and current injector. SMSGs provide optical as well as lateral current confinement, eliminating the need for ring contacts and lateral build-in optical and current confinement, allowing their implementation on arbitrarily large surfaces. Using an SMSG as the top mirror enables fabrication of monolithic VCSELs from any type of semiconductor crystal. The construction of VCSELs with SMSGs requires significantly less p-type material, in comparison to conventional VCSELs. In this paper, using a three-dimensional, fully vectorial optical model, we analyse the properties of the stand-alone SMSG in a number of semiconductor materials for a broad range of wavelengths. Integrating the optical model with thermal and electrical numerical models, we then simulate the threshold operation of an exemplary SMSG VCSEL.

Semiconductor planar microcavities significantly enhance the interaction between light and matter and are thus crucial as a fundamental research platform for investigations of quantum information processing, quantum dynamics, and exciton-polariton observations. Microcavities also serve as a very agile basis for modern resonant-cavity light-emitting and detecting devices now in large-scale production for applications in sensing and communication. The fabrication of microcavity devices composed of both common materials now used in photonics and uncommon or arbitrary materials that are new to photonics offers great freedom in the exploration of the functionalities of novel microcavity device concepts. Here we propose and carefully investigate two unique microcavity designs. The first design uses a monolithic high-index-contrast grating (MHCG) and a distributed Bragg reflector (DBR) as the microcavity mirrors. The second design uses two MHCGs as the microcavity mirrors. We demonstrate by numerical analysis that MHCG-DBR and MHCG-MHCG microcavities, whose lateral radial dimension is 16 μm, reach very large quality factors at the level of 104 and nearly 106, as well as purposely designed wavelength tuning ranges of 8 and 60 nm in both configurations, respectively. Our MHCG-MHCG microcavities with a very small size of 600 nm in the vertical dimension show extremely large quality factors, which can be explained by treating the optical modes as quasi-bound states in a continuum (BICs). Moreover, we verify our theoretical analysis and calibrate our simulation parameters by comparing to the experimental characteristics of an electrically injected MHCG-DBR microcavity vertical-cavity surface-emitting laser (VCSEL) emitting at a peak wavelength of about 980 nm. We use the calibrated parameters to simulate the emission characteristics of electrically injected VCSELs in various MHCG-DBR and MHCG-MHCG microcavity configurations to illustrate the influence of microcavity designs and their quality factors on the predicted lasing properties of the devices.

We report the first experimental parametric analysis of subwavelength monolithic high-contrast grating (MHCG) mirrors. To date, subwavelength grating mirrors have been fabricated by suspending a thin grating membrane in the air or placing it on a low refractive index material – a scheme that requires sophisticated processing and makes the gratings sensitive to mechanical stress, impeding current injection, and heat dissipation if used in active devices. Inherently MHCGs are well suited for optoelectronic devices because they can be fabricated in all possible material systems. Here we demonstrate above 90% optical power reflectance, strong polarization discrimination. Based on experimental analysis aided by numerical simulations, we demonstrate the possibility of tuning the spectral characteristics of MHCGs reflectance for more than 200 nm via modification of the duty cycle of the MHCG stripes. We show our MHCG tuning method is convenient to define the properties of MHCG devices during the device processing.