This paper covers the study of high-frequency (~ 1 GHz) ZnO piezoelectric transducer integrated on a silicon substrate able to generate both compressional and shear acoustic waves. First, to promote the longitudinal mode, an electrical matching of the transducer in this high-frequency range is effectuated. Second, to promote shear waves, new deposition conditions were applied, giving thin zinc oxide films of inclined c-axis. The RF microprobe was used to validate the transducer design and to conduct the viscosity measurements. Thus, the shear and the volume viscosity of a water droplet were measured.
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Efficient cleaning of contaminations in the semiconductor industry is a determining factor in ensuring the good quality of the electronics products. We present here the dynamic wetting characterization of a fluid on top of DTI structures using ultra-high frequency acoustic method. The dynamics of the fluid will be established using a PDMS micro-channel placed on top of the structures, in order to obtain conditions as close as possible to those used in the industrial process. Wetting state of the DTI structures is determined based on the measured acoustic reflection coefficient.
Gate oxide patterning during integrated circuits manufacturing can be defined by a photolithography and wet etch sequence. Wet etching process can be at risk. Indeed, during this step, liquid molecules can penetrate through resist layer to reach and damage the underlying material. The key parameter to know is the maximum duration that a given resist can ensure an effective protection. This study shows in the first time how to evaluate etching molecules diffusion thanks to ATR-FTIR technology and a gravimetric approach. Then a two-steps diffusion model has been established. Finally, differences are observed between four different commercial resists.
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