Gate oxide patterning during integrated circuits manufacturing can be defined by a photolithography and wet etch sequence. Wet etching process can be at risk. Indeed, during this step, liquid molecules can penetrate through resist layer to reach and damage the underlying material. The key parameter to know is the maximum duration that a given resist can ensure an effective protection. This study shows in the first time how to evaluate etching molecules diffusion thanks to ATR-FTIR technology and a gravimetric approach. Then a two-steps diffusion model has been established. Finally, differences are observed between four different commercial resists.
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