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Silicide and Schottky barrier formation has been characterized for Ti deposited on the Si(100) surface, both with and without surface oxides present. Reactions were carried out in ultrahigh vacuum, while observing electronic and chemical changes with ultraviolet photoemission spectroscopy and Auger electron spectroscopy. Ti deposited on Si shows a sharp interface, no change in Fermi level position, and no silicide formation until heated to 400–500 °C. Ti deposited on thin oxides (<20 Å) frees silicon at the interface and reacts through the oxide to form a silicide when heated to 400–500 °C. Ti deposited on thick thermal oxides also frees Si, but no further reaction occurs until heated to 700–900 °C, at which point TiOx forms near the surface. This differing behavior of thin and thick oxides is shown to be consistent with bulk thermodynamic data.

The detection of subtenth micron paticles in processing fluids is a critical and growing need in the semiconductor industry. In this letter, we show that a small dielectric particle in a focused monochromatic light beam produces a scattered wave (Rayleigh scattering) in phase quadrature with the far-field incident beam, therefore causing a phase shift in this beam. Thus, the forward scattered field due to the particle may be detected using a bright field interferometer. This allows detection which is near Shott noise limited even for very small particles, and measures the sign of the scattered field as well, such that particles may be distinguished from bubbles. We describe an appropriate interferometer design based on Nomarski optics, which we have used to verify our calculation, measuring scattering in water from single polystyrene spheres as small as 0.038 μm in diameter.