The photoreforming of lignocellulose is a novel method to produce clean and sustainable H 2 energy. However, the catalytic systems usually show low activity under ultraviolet light; thus, this reaction is very limited at present. Visible light-responsive metal-free two-dimensional graphite-phased carbon nitride (g-C 3 N 4 ) is a good candidate for photocatalytic hydrogen production, but its activity is hindered by a bulky architecture. Although reported layered g-C 3 N 4 modified with active functional groups prepared by the chemical exfoliation enhances the photocatalytic activity, it lost the intrinsic structure and thus is not conducive to understand the structure−activity relationship. Herein, we report an intrinsic monolayer g-C 3 N 4 (∼0.32 nm thickness) prepared by nitrogenprotected ball milling in water, which shows good performance of photoreforming lignocellulose to H 2 driven by visible light. The exciton binding energy of g-C 3 N 4 was estimated from the temperature-dependent photoluminescence spectra, which is a key factor for subsequent charge separation and energy transfer. It is found that monolayer g-C 3 N 4 with smaller exciton binding energy increases the free exciton concentrations and promotes the separation efficiency of charge carriers, thereby effectively improving its performance of photocatalytic reforming of lignocellulose, even the virgin lignocellulose and waste lignocellulose. This result could lead to more active catalysts to photoreform the raw biomass, making it possible to provide clean energy directly from locally unused biomass.
The introduction of metal vacancies into n-type semiconductors could efficiently construct intimate contact interface p−n homojunctions to accelerate the separation of photogenerated carriers. In this work, a cationic surfactant occupancy method was developed to synthesize an indium-vacancy (V In )enriched p−n amorphous/crystal homojunction of indium sulfide (A/C-IS) for sodium lignosulfonate (SL) degradation. The amount of V In in the A/C-IS could be regulated by varying the content of added cetyltrimethylammonium bromide (CTAB). Meanwhile, the steric hindrance of CTAB produced mesopores and macropores, providing transfer channels for SL. The degradation rates of A/C-IS to SL were 8.3 and 20.9 times higher than those of crystalline In 2 S 3 and commercial photocatalyst (P25), respectively. The presence of unsaturated dangling bonds formed by V In reduced the formation energy of superoxide radicals ( • O 2 − ). In addition, the inner electric field between the intimate contact interface p−n A/C-IS promoted the migration of electron−hole pairs. A reasonable degradation pathway of SL by A/C-IS was proposed based on the above mechanism. Moreover, the proposed method could also be applicable for the preparation of p−n homojunctions with metal vacancies from other sulfides.
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