2023
DOI: 10.1016/j.colsurfa.2023.131134
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In situ oxidation of ethylene glycol coupled with Bi2O3 epitaxial growth to prepare Bi2O3/BiOCOOH heterojunctions with oxygen vacancies for efficient photocatalytic lignin degradation

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Cited by 14 publications
(5 citation statements)
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“…6c and d), indicating that they have n-type properties, and the flat band potentials are calculated to −0.46 and −0.74 V, respectively. Generally speaking, the CB potential for n-type semiconductors is 0.1 to 0.3 V higher than the flat band potential, 45,46 and the difference is regarded as 0.2 V in this study. Hence, the CB potentials of PS@TiO 2 and Bi 2 O 3 are −0.66 V ( vs. NHE) and −0.94 V ( vs. NHE), respectively.…”
Section: Resultsmentioning
confidence: 92%
“…6c and d), indicating that they have n-type properties, and the flat band potentials are calculated to −0.46 and −0.74 V, respectively. Generally speaking, the CB potential for n-type semiconductors is 0.1 to 0.3 V higher than the flat band potential, 45,46 and the difference is regarded as 0.2 V in this study. Hence, the CB potentials of PS@TiO 2 and Bi 2 O 3 are −0.66 V ( vs. NHE) and −0.94 V ( vs. NHE), respectively.…”
Section: Resultsmentioning
confidence: 92%
“…4e. In general, the position of the conduction band is B0.2 V higher than the flat-band position for n-type semiconductors, 64 thus the conduction band (CB) potential of Fe 3 O 4 @TiO 2 -Co-2.7 is À0.39 V (vs. NHE). Based on E g = E VB À E CB , the valence band (VB) potential of Fe 3 O 4 @TiO 2 -Co-2.7 can be estimated as 3.11 V (vs. NHE).…”
Section: Photocatalytic Degradation Performancementioning
confidence: 97%
“…19 For Bi 2 O 3 , the Bi 4f 7/2 and Bi 4f 5/2 peaks of Bi 3+ in Bi 2 O 3 are assigned to the values of 158.9 and 164.2 eV (Figure 2a), respectively, and the peak at 529.7 eV (Figure 2c) is ascribed to O 1s of O 2− in Bi 2 O 3 . 37,38 Binding energies of O 1s and Bi 4f for BOB4 are between Bi 4 O 5 Br 2 and Bi 2 O 3 (Figure 2a,c). Notably, peaks in the Br 3d spectrum of BOB4 (Figure 2b) shift toward a high binding energy by 0.2 eV, compared with pure Bi 4 O 5 Br 2 .…”
Section: Preparation Of Bimentioning
confidence: 99%
“…Bismuth oxide (Bi 2 O 3 ) is a typical lamellar semiconductor, with an E g of 2.58–2.85 eV and especially a deep VB potential, which is advantageous for photocatalytic reactions to produce holes (h + ) with a strong oxidation capacity . It has been used for CO 2 reduction, water splitting, contaminant degradation, lignin degradation, nitrogen fixation, and preparation of heterogeneous photocatalysts with other compounds to improve photoactivity, such as CdMoO 4 , TiO 2 , SrTiO 3 , Zn 3 In 2 S 6 , ZnO, MnO 2 , and Ta 2 O 5 , but has not been used to modify Bi 4 O 5 Br 2 . So it makes sense to synthesize a heterojunction photocatalyst composed of Bi 4 O 5 Br 2 with a high CB potential and Bi 2 O 3 with a low VB potential. , …”
Section: Introductionmentioning
confidence: 99%