The possibility of a novel type of semiconductor quantum dots obtained by spatially modulating the spin-orbit coupling intensity in III-V heterostructures is discussed. Using the effective mass model we predict confined one-electron states having peculiar spin properties. Furthermore, from mean field calculations (local-spin-density and Hartree-Fock) we find that even two electrons could form a bound state in these dots.Comment: 9 pages, 3 figures. Accepted in PRB (Brief Report) (2004

The electronic spin precession in semiconductor dots is strongly affected by the spin-orbit coupling. We present a theory of the electronic spin resonance at low magnetic fields that predicts a strong dependence on the dot occupation, the magnetic field and the spin-orbit coupling strength. Coulomb interaction effects are also taken into account in a numerical approach.PACS 73.21. La, χ nℓ+ (r, η) ≡ ϕ nℓ+ (r)

The spin-orbit coupling influences the total spin of semiconductor quantum dots. We analyze the theoretical prediction for the combined effects of spin-orbit coupling, weak vertical magnetic fields and deformation of the dot. Our results allow the characterization of the quantum dots as spin switches, controllable with electric gates.Comment: 4 pages, 4 figure

We derive analitycally a partial diagonalization of the Hamiltonian representing a quantum dot including spin-orbit interaction and Zeeman energy on an equal footing. It is shown that the interplay between these two terms results in a renormalization of the spin-orbit intensity. The relation between this feature and experimental observations on conductance fluctuations is discussed, finding a good agreement between the model predictions and the experimental behavior.

We investigate the relevance of the spin-orbit coupling to the far-infrared absorption of two-dimensional semiconductor dots. Varying the strength of the Dresselhaus term, a mechanism feasible in experiment by changing the dot width, distinctive splittings of the Kohn peak as well as additional low energy modes are predicted in a non-interacting model. Each mode has a spatial distribution of charge, perpendicular and in-plane spin densities that correlate in a peculiar way with the frequency and polarization of the external field. We study the robustness of these features against electron-electron interactions as well as the appearance of interaction-induced additional characteristics. PACS 73.21. La,