We analyse the interplay between Dresselhaus, Bychkov-Rashba, and Zeeman interactions in a two-dimensional semiconductor quantum system under the action of a magnetic field. When a vertical magnetic field is considered, we predict that the interplay results in an effective cyclotron frequency that depends on a spin-dependent contribution. For in-plane magnetic fields, we found that the interplay induces an anisotropic effective gyromagnetic factor that depends on the orientation of the applied field as well as on the orientation of the electron momentum.PACS numbers: PACS 71.70. Ej, 73.21.Fg The effects produced by different spin-dependent interactions in semiconductor structures are currently in the forefront of experimental and theoretical efforts in mesoscopic physics. The explosive activity is motivated by the desire for a deep understanding of quantum coherence phenomena. The other driving force is the hope that the spintronics research would provide novel, lowdissipative microelectronic devices [1,2].Most measurements of spin effects in semiconductor microstructures are performed applying a magnetic field. In this case, two intrinsic spin-dependent interactions naturally appear: the well-known Zeeman interaction, which couples the electron spin with the applied field, and the spin-orbit coupling. The latter has been extensively studied starting from two-dimensional electron gas to quantum dots [3,4,5,6,7,8], and constitutes the basis of several proposals for spin-based applications [9,10,11].In a semiconductor, the spin-orbit coupling originates as a relativistic effect caused by electric fields present in the material (cf [12]). Such a system can be described by the HamiltonianHere* is the kinetic energy with the effective mass m * of electrons in the conduction band of the sample and p x , p y are components of the momentum. The electric field caused by the bulk inversion asymmetry of the crystalline structure contributes to the Hamiltonian, Eq.(1), with the Dresselhaus term, H D [13]. This term has, in general, a cubic dependence on the momentum of the carriers. For a narrow [0, 0, 1] quantum well, it reduces to the 2D, linear momentum dependent term H D = β (p x σ x − p y σ y ) / . Here, the σ's are the Pauli matrices, and β is the intensity of this interaction (cf Ref.12). The electric field caused by the structure inversion asymmetry (SIA) of the heterostructure generates the Bychkov-Rashba term, H R [14]. Since in the asymmetric quantum wells the SIA comes from the vertical direction, the Bychkov-Rashba interaction H R has the form: H R = α (p y σ x − p x σ y ) / , where α is the corresponding strength [12].The correlation between different spin-dependent interactions is a key point in the understanding of spin phenomena in semiconductors. In this work, we shall study a two-dimensional (2D) semiconductor system in a magnetic field, described by the Hamiltonian (1), paying special attention to the interplay between the Zeeman and spin-orbit interactions. We will show that depending on the orienta...