Quantum dots based on spin properties of semiconductor heterostructures

Valín-Rodríguez, Manuel; Puente, A.; Serra, Llorenç

doi:10.1103/physrevb.69.153308

Cited by 39 publications

(45 citation statements)

References 18 publications

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“…The modifications of the Fock-Darwin states induced by SOI were investigated by theoretical works. 16 Experimentally, modulations induced by SOI similar to the ones we present here were observed in studies of the excited-state photoluminescence of self-assembled quantum dots 17 and of a single-electron tunneling spectrum in an Al nanoparticle.…”

Section: A Experimental Resultssupporting

confidence: 77%

Enhancement of Rashba coupling in vertical In0.05Ga0.95As/GaAs quantum dots

et al. 2011

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We study the spin-splitting energies in low-potential-barrier quantum dots, finding splitting energies that are orbital state dependent. The theoretical analysis is done with a generalization of the Fock-Darwin states in the presence of spin-orbit interactions. We discuss experimental evidence indicating that the Rashba interaction strength in vertical In x Ga 1−x As/GaAs quantum dots is in the range 80 meVÅ λ R 120 meVÅ. This enhanced spin-orbit interaction can be understood from the high penetration of the electron wave function into the quantum well with low-potential barrier.

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Section: A Experimental Resultssupporting

confidence: 77%

Enhancement of Rashba coupling in vertical In0.05Ga0.95As/GaAs quantum dots

et al. 2011

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“…5 although the experimental value ofhω 0 at low B 's is close to 1 meV. Therefore, to ascribe the observation to SO effects one should assume that the value of the confinementhω 0 decreases as B increases [14].…”

Section: Discussion On Experimental Evidences and Conclusionmentioning

confidence: 99%

Zeeman energy and anomalous spin splitting in lateral GaAs quantum dots

2004

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Abstract. The level splittings induced by a horizontal magnetic field in a parabolic two-dimensional quantum dot with spin-orbit interaction are obtained. Characteristic features induced by the spin-orbit coupling are the appearance of zero-field gaps as well as energy splittings that depend on the electronic state and the orientation of the magnetic field in the quantum-dot plane. It is suggested that these quantum-dot properties could be used to determine the Rashba and Dresselhaus spin-orbit intensities PACS. 73.21.

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“…Spin-orbit effects on single dots have been already extensively investigated. [27][28][29][30][31][32][33][34][35][36][37][38] In this paper we investigate the role of spin-orbit coupling, represented by the Dresselhaus ͑both linear and cubic͒ and Bychkov-Rashba terms, in spin and charge properties of two laterally coupled quantum dots based on GaAs materials parameters. We perform numerically exact calculations of the energy spectrum using the method of finite differences.…”

Section: Introductionmentioning

confidence: 99%

Spin-orbit effects in single-electron states in coupled quantum dots

2005

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Spin-orbit effects in single-electron states in laterally coupled quantum dots in the presence of a perpendicular magnetic field are studied by exact numerical diagonalization. Dresselhaus ͑linear and cubic͒ and Bychkov-Rashba spin-orbit couplings are included in a realistic model of confined dots based on GaAs. Group theoretical classification of quantum states with and without spin-orbit coupling is provided. Spin-orbit effects on the g factor are rather weak. It is shown that the frequency of coherent oscillations ͑tunneling amplitude͒ in coupled dots is largely unaffected by spin-orbit effects due to symmetry requirements. The leading contributions to the frequency involves the cubic term of the Dresselhaus coupling. Spin-orbit coupling in the presence of a magnetic field leads to a spin-dependent tunneling amplitude, and thus to the possibility of spin to charge conversion, namely, spatial separation of spin by coherent oscillations in a uniform magnetic field. It is also shown that spin hot spots exist in coupled GaAs dots already at moderate magnetic fields, and that spin hot spots at zero magnetic field are due to the cubic Dresselhaus term only.

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Quantum dots based on spin properties of semiconductor heterostructures

Cited by 39 publications

References 18 publications

Enhancement of Rashba coupling in vertical In0.05Ga0.95As/GaAs quantum dots

Enhancement of Rashba coupling in vertical In0.05Ga0.95As/GaAs quantum dots

Zeeman energy and anomalous spin splitting in lateral GaAs quantum dots

Spin-orbit effects in single-electron states in coupled quantum dots

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