A solution processed method for fabricating transition metal sulfides on fluorine doped tin oxide (FTO) as efficient counter electrodes in iodine/iodide based solar cells has been demonstrated. Conversion efficiencies of 7.01% and 6.50% were obtained for nickel and cobalt sulfides, respectively, comparable to the conventional thermally platinised FTO electrodes (7.32%). A comparable charge transfer resistance of Ni(3)S(2) and Co(8.4)S(8) to conventional Pt was found to be a key factor for such high efficiencies. Cyclic voltammetry, Kelvin probe microscopy, Electrochemical Impedance Spectroscopy, and Tafel polarization were performed to study the underlying reasons behind such efficient counter electrode performance.
Solution processed zinc tin oxide (ZTO) thin film transistors (TFTs) were fabricated by varying the Zn/Sn composition. The addition of Sn to the zinc oxide (ZnO) films resulted in improved electrical characteristics, with devices of Zn0.7Sn0.3O composition showing the highest mobility of 7.7 cm(2)/(V s). An improvement in subthreshold swings was also observed, indicative of a reduction of the interfacial trap densities. Mobility studies at low temperature have been carried out, which indicated that the activation energy was reduced with Sn incorporation. Kelvin probe force microscopy was performed on the films to evaluate work function and correlated to the metal-semiconductor barrier indicating Zn0.7Sn0.3O films had the smallest barrier for charge injection. Organic-inorganic hybrid complementary inverters with a maximum gain of 10 were fabricated by integrating ZTO TFTs with poly-3-hexylthiophene (P3HT) transistors.
The enhanced electron field emission (EFE) properties of high aspect ratio, vertically aligned SiNW-ZnO core-shell arrays are presented. These core-shell arrays are prepared by a thin, controlled, highly crystalline and conformal coating of zinc oxide as shell using the plasma assisted-atomic layer deposition (PA-ALD) route on vertically aligned silicon nanowire arrays core. The core-shell nanostuctures are confirmed by HRTEM imaging along with the individual elemental mapping demonstrating the conformal deposition of 10 nm ZnO on the SiNWs. EFE properties of va-SiNW-ZnO core-shell arrays showed a high emission current density of 51 μA cm(-2) and a low turn on field of 7.6 V μm(-1) (defined at a current density of 1 μA cm(-2)) compared to the 3.2 μA cm(-2) emission current density and 9.1 V μm(-1) turn on field for SiNWs. The field enhancement factor (β) of 4227 for the devices demonstrates that these core-shell nanowire arrays are excellent field-emitters. Such an enhancement in the field emission originates from the details of the band structure of this peculiar material combination resulting in good electron transport from SiNW to ZnO as evident from the band diagram of the core-shell material. This is further supported by the conducting AFM studies where lowering in threshold voltage by 1 eV confirms the role of ZnO coating in the enhancement of the emission characteristics.
The origin of various defect levels in the SnS thin films deposited using chemical spray pyrolysis (CSP) technique has been explored in this manuscript, by employing low‐temperature photoluminescence (PL) technique. Concentration of Sn in the samples was varied purposefully by ex situ diffusion in order to alter the defect levels. The acceptor level obtained at 0.22 eV from the Arrhenius plot, has been assigned as the defect level caused by the Sn vacancies present in the lattice. Two shallow donor levels are conclusively identified and their activation energies have been estimated. The present study could also unearth a trap level in the forbidden energy gap which was due to the oxygen contaminant occupied by the vacancy of Sn. This trap level could be removed by annealing the sample in vacuum or through the ex situ diffusion of Sn. Employing Kelvin probe force microscopy (KPFM), the work‐function of SnS was obtained as 4.925 eV, from which the position of the Fermi level could be assigned. Based on the present work, an energy level scheme for SnS thin films is proposed outlying origin of various defect levels.
Bilayer organic field effect transistor (OFET) structures consisting of an optically active electron donor (D) and an electrically active electron acceptor (A) system offer a quantitative device tool for characterizing photoinduced charge transport processes. Here, we report an investigation of the photoinduced response of a bilayer OFET fabricated from a naphthalene-bis(dicarboximide)-based polymer (N2200) as the n-channel A transport layer and a p-channel regioregular poly-3-hexylthiophene (P3HT) top D layer. This FET exhibits characteristic steady-state spectral response as well as transient profiles as a function of the gate voltage (V g ), yielding valuable information on bulk and interfacial charge transport properties. Thus, the derived N2200 electron mobility is shown to be in good agreement with bulk measurements (significantly greater than that of PCBM), and the N2200/P3HT interface is shown to be a highly efficient structure for charge transfer and free carrier generation.
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