Tuning Electrical Properties in Amorphous Zinc Tin Oxide Thin Films for Solution Processed Electronics

Chandra, Ramesh; Rao, Manohar; Zhang, Keke; Prabhakar, Rajiv Ramanujam; Shi, Chen; Zhang, Jie; Mhaisalkar, Subodh; Mathews, Nripan

doi:10.1021/am401003k

Cited by 58 publications

(38 citation statements)

References 21 publications

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“…[12][13][14] a-ZTO possess the same overlapping s-orbital dominated dispersed conduction band structure as a-IGZO 15 leading to a high mobility and conductivity, that is maintained even in absence of a crystal structure. a-ZTO has already been utilised in laboratory scale thin film transistors, 11,[16][17][18] photovolatic cells, 19 gas sensing, 20 transport channels in metal-semiconductor-field-effect-transistors 21,22 and organic light-emitting diodes (OLEDs). 13,23 a-ZTO has been grown by a variety of physical vapour deposition (PVD) methods including magnetron sputtering, 11,13,24 pulsed laser deposition 25 and some chemical methods.…”

Section: Introductionmentioning

confidence: 99%

Low-Cost, High-Performance Spray Pyrolysis-Grown Amorphous Zinc Tin Oxide: The Challenge of a Complex Growth Process

Zhussupbekova

Caffrey

Zhussupbekov

et al. 2020

ACS Appl. Mater. Interfaces

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Transparent conductive oxides (TCOs) are important materials for a wide range of optoelectronic devices. Amorphous zinc-tin oxide (a-ZTO) is a TCO and one of the best non toxic, low-cost replacement for more expensive amorphous indium-gallium-zinc oxide. Here, we employ spray pyrolysis, an inexpensive and versatile chemical vapour deposition based technique, to synthesise a-ZTO with an as-deposited conductivity of ≈300 S/cm -the highest value hitherto among the reported solution processed films. Compositional analysis via X-ray photoelectron spectroscopy reveals a non-stoichimoetric transfer of Zn and Sn from the dissolved precursors into the film, with best electrical properties achieved at a film composition of x film =0.38±0.04 ((ZnO) x (SnO 2 ) 1 −x (0

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Section: Introductionmentioning

confidence: 99%

Low-Cost, High-Performance Spray Pyrolysis-Grown Amorphous Zinc Tin Oxide: The Challenge of a Complex Growth Process

Zhussupbekova

Caffrey

Zhussupbekov

et al. 2020

ACS Appl. Mater. Interfaces

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“…As shown in Figure a, the nanocrystalline‐CdS (nc‐CdS) film revealed poor field‐effect mobility ( µ FE,CdS = 0.05 cm 2 V −1 s −1 ) and large threshold voltage shift in hysteresis loop (Δ V Th, Hys = 10.0 V) owing to numerous defective sites at the interface/surface of the nc‐CdS film and grain boundaries. In contrast, Sn‐eqi amorphous ZTO semiconductor (Sn‐eqi a‐ZTO) exhibited high‐performance carrier transport behavior ( µ FE, Sn‐eqi a‐ZTO = 2.5 cm 2 V −1 s −1 ) and low charge trap density‐induced narrow hysteresis loop (Δ V Th, Hys = 1.2 V) in the dark state owing to Sn‐induced effective conduction pathway, grain‐boundary‐free amorphous phase, and low Vo concentration . However, the wide optical bandgap (λ ZTO, bandgap = 335 nm) of Sn‐eqi a‐ZTO film causes direct band‐to‐band absorption of UV‐level spectral photons and introduces highly transparent optical properties over most spectral ranges of visible light (Figure b).…”

Section: Resultsmentioning

confidence: 99%

All‐Solution‐Processed Metal Oxide/Chalcogenide Hybrid Full‐Color Phototransistors with Multistacked Functional Layers and Composition‐Gradient Heterointerface

Cho

Kim

Jung

et al. 2018

Advanced Optical Materials

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For the development of cost‐effective, ultrasensitive, fast dynamic, and full‐color photodetection platforms, an all‐solution‐processed metal oxide/chalcogenide semiconductor hybrid‐structure‐based visible‐light phototransistor with (i) multistacked functional materials, (ii) a chemically stable solution‐based construction, and (iii) defect‐suppressed composition‐gradient heterointerfaces is proposed. Herein, the functional multistacked structure (a‐ZTO/cc‐CdS/a‐ZTO) consists of high‐mobility amorphous zinc tin oxide (ZTO) (a‐ZTO bottom), a high‐efficiency coarsened crystalline CdS (cc‐CdS) visible‐light absorber, and defective surface passivation a‐ZTO (top) to boost photosensitivity via efficient generation/transport and spontaneous separation/confinement of photocarriers. Chemically stable solution‐based multistacking is achieved via careful choice of chemically durable oxide and chalcogenide semiconductors (Sn‐eqi ZTO and CdS). The composition‐gradient heterointerfaces formed near ZTO/CdS and CdS/ZTO junctions via thermally activated healing processes provide instantaneous photoresponse and full‐color sensing performance. Finally, the all‐solution‐processed a‐ZTO/cc‐CdS/a‐ZTO hybrid phototransistor achieves repeatable/reproducible real‐time full‐color detection with high photosensitivity, fast phototransient speeds, and no persistent photocurrent behavior under dynamic stimulus using primary colors. It is believed that the all‐solution processed oxide/chalcogenide hybrid phototransistor with multistacked functional materials and composition‐gradient heterointerfaces will facilitate the development of cost‐efficient, ultrasensitive, fast dynamic, and full‐color visible‐light detection system.

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“…However, alternative semiconductor materials that rely on abundant and non-toxic elements are required due to environmental demands. Zinc-tin-oxide (ZTO) is a promising indium and gallium-free alternative and impressive results have already been obtained in TFTs applications [19,20].…”

Section: Amorphous Semiconductor Oxidesmentioning

confidence: 99%

Solution Combustion Synthesis: Applications in Oxide Electronics

Branquinho¹,

Santa²,

Carlos³

et al. 2016

Developments in Combustion Technology

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Oxide-based electronics have been well established as an alternative to silicon technology; however, typical processing requires complex, high-vacuum equipment, which is a major drawback, particularly when targeting low-cost applications. The possibility to deposit the materials by low-cost techniques such as inkjet printing has drawn tremendous interest in solution processible materials for electronic applications; however, high processing temperatures still required. To overcome this issue, solution combustion synthesis has been recently pursued. Taking advantage of the exothermic nature of the reaction as a source of energy for localized heating, the precursor solutions can be converted into oxides at lower process temperatures. Theoretically, this can be applied to any metal ions to produce the desired oxide, opening unlimited possibilities to materials' composition and combinations. Solution combustion synthesis has been applied for the production of semiconductor thin films based on ZnO, In 2 O 3 , SnO 2 and combinations of these oxides, and also for high κ dielectrics (Al 2 O 3 ). All of which are required for numerous electronic devices and applications such as fully oxide-based thin-film transistors (TFTs). The properties of produced thin films are highly dependent on the precursor solution characteristics; hence, the influence of several processing parameters; organic fuel, solvent and annealing temperature was studied. Although precursor solution degradation/oxide formation mechanisms are not yet fully understood, particularly for thin films, we demonstrate that high-performance devices are obtained with combustion solution-based metal oxide thin films. The results clearly show that solution combustion synthesis is becoming one of the most promising methods for low-temperature flexible electronics.

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Tuning Electrical Properties in Amorphous Zinc Tin Oxide Thin Films for Solution Processed Electronics

Cited by 58 publications

References 21 publications

Low-Cost, High-Performance Spray Pyrolysis-Grown Amorphous Zinc Tin Oxide: The Challenge of a Complex Growth Process

Low-Cost, High-Performance Spray Pyrolysis-Grown Amorphous Zinc Tin Oxide: The Challenge of a Complex Growth Process

All‐Solution‐Processed Metal Oxide/Chalcogenide Hybrid Full‐Color Phototransistors with Multistacked Functional Layers and Composition‐Gradient Heterointerface

Solution Combustion Synthesis: Applications in Oxide Electronics

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