The topological aspects of electrons in solids can emerge in real materials, as represented by topological insulators. In theory, they show a variety of new magneto-electric phenomena, and especially the ones hosting superconductivity are strongly desired as candidates for topological superconductors. While efforts have been made to develop possible topological superconductors by introducing carriers into topological insulators, those exhibiting indisputable superconductivity free from inhomogeneity are very few. Here we report on the observation of topologically protected surface states in a centrosymmetric layered superconductor, β-PdBi2, by utilizing spin- and angle-resolved photoemission spectroscopy. Besides the bulk bands, several surface bands are clearly observed with symmetrically allowed in-plane spin polarizations, some of which crossing the Fermi level. These surface states are precisely evaluated to be topological, based on the Z2 invariant analysis in analogy to three-dimensional strong topological insulators. β-PdBi2 may offer a solid stage to investigate the topological aspect in the superconducting condensate.

In the past few years, a new state of quantum matter known as the time-reversal-invariant topological insulator has been predicted theoretically and realized experimentally. All of the topological insulators discovered so far in experiment are inversion symmetric 1-5 -except for strained HgTe, which has weak inversion asymmetry, a small bulk gap but no bulk charge polarization 6 . Strong inversion asymmetry in topological insulators would not only lead to many interesting phenomena, such as crystalline-surface-dependent topological electronic states, pyroelectricity and intrinsic topological p-n junctions, but would also serve as an ideal platform for the realization of topological magneto-electric effects 7,8 , which result from the modification of Maxwell equations in topological insulators. Here we report the discovery of a strong inversion asymmetric topological insulator phase in BiTeCl by angle-resolved photoemission spectroscopy, which reveals Dirac surface states and crystalline-surface-dependent electronic structures. Moreover, we observe a tenfold increase of the bulk energy gap in BiTeCl over the weak inversion asymmetric topological insulator HgTe, making it a promising platform for topological phenomena and possible applications at high temperature.Topological insulators represent a new state of quantum matter with a bulk energy gap and robust surface states formed by an odd number of Dirac fermions with helical spin texture. The gaplessness of the surface states is protected by the time-reversal symmetry. Depending on their crystal structure, topological insulators may or may not preserve inversion symmetry. Although the presence of inversion symmetry is helpful in identifying topological insulators owing to the existence of the parity criterion 9 , the search for inversion asymmetric topological insulators (IATIs) persists 8,[10][11][12][13] as an effort to realize new topological phenomena in practical material systems.IATIs have many unusual properties. For example, in an IATI, the top and bottom crystal surfaces are in-equivalent, resulting in different surface electronic structures. If the charge carriers of different surface states are opposite (Fig. 1a), a natural topological p-n junction is formed (Fig. 1a), enabling chiral edge states in a magnetic field that can carry dissipationless transport 14 . Furthermore, when an IATI is driven to the topological phase transition towards a trivial insulator, Weyl semimetals can

Two-dimensional (2D) mobile carriers are a wellspring of quantum phenomena. Among various 2D-carrier systems, such as field effect transistors and heterostructures, polar materials hold a unique potential; the spontaneous electric polarization in the bulk could generate positive and negative 2D carriers at the surface. Although several experiments have shown ambipolar carriers at the surface of a polar semiconductor BiTeI, their origin is yet to be specified. Here we provide compelling experimental evidences that the ambipolar 2D carriers at the surface of BiTeI are induced by the spontaneous electric polarization. By imaging electron standing waves with spectroscopic imaging scanning tunneling microscopy, we find that positive or negative carriers with Rashba-type spin splitting emerge at the surface correspondingly to the polar directions in the bulk. The electron densities at the surface are constant independently of those in the bulk, corroborating that the 2D carriers are induced by the spontaneous electric polarization. We also successfully image that lateral p-n junctions are formed along the boundaries of submicron-scale domains with opposite polar directions. Our study presents a novel means to endow non-volatile, spin-polarized, and ambipolar 2D carriers as well as, without elaborate fabrication, lateral p-n junctions of those carriers at atomically-sharp interfaces.

In the presence of spin-orbit coupling, electron scattering off impurities depends on both spin and orbital angular momentum of electrons -spin-orbit scattering. Although some transport properties are subject to spin-orbit scattering, experimental techniques directly accessible to this effect are limited. Here we show that a signature of spin-orbit scattering manifests itself in quasiparticle interference (QPI) imaged by spectroscopic-imaging scanning tunneling microscopy. The experimental data of a polar semiconductor BiTeI are well reproduced by numerical simulations with the T -matrix formalism that include not only scalar scattering normally adopted but also spin-orbit scattering stronger than scalar scattering. To accelerate the simulations, we extend the standard efficient method of QPI calculation for momentum-independent scattering to be applicable even for spin-orbit scattering. We further identify a selection rule that makes spin-orbit scattering visible in the QPI pattern. These results demonstrate that spin-orbit scattering can exert predominant influence on QPI patterns and thus suggest that QPI measurement is available to detect spin-orbit scattering. * kohsaka@riken.jp 1 arXiv:1703.06234v1 [cond-mat.mes-hall]

We performed X-ray diffraction and electrical resistivity measurement up to pressures of 5 GPa and the first-principles calculations utilizing experimental structural parameters to investigate the pressure-induced topological phase transition in BiTeBr having a noncentrosymmetric layered structure (space group P 3m1). The P 3m1 structure remains stable up to pressures of 5 GPa; the ratio of lattice constants, c/a, has a minimum at pressures of 2.5 -3 GPa. In the same range, the temperature dependence of resistivity changes from metallic to semiconducting at 3 GPa and has a plateau region between 50 and 150 K in the semiconducting state. Meanwhile, the pressure variation of band structure shows that the bulk band-gap energy closes at 2.9 GPa and re-opens at higher pressures. Furthermore, according to the Wilson loop analysis, the topological nature of electronic states in noncentrosymmetric BiTeBr at 0 and 5 GPa are explicitly revealed to be trivial and non-trivial, respectively. These results strongly suggest that pressure-induced topological phase transition in BiTeBr occurs at the pressures of 2.9 GPa.