We study spin transport in a fully hBN encapsulated monolayer-graphene van der Waals heterostructure at room temperature. A top-layer of bilayer-hBN is used as a tunnel barrier for spin-injection and detection in graphene with ferromagnetic cobalt electrodes. We report surprisingly large and bias-induced (differential) spin-injection (detection) polarizations up to 50% (135%) at a positive voltage bias of + 0.6 V, as well as sign inverted polarizations up to −70% (−60%) at a reverse bias of −0.4 V. This demonstrates the potential of bilayer-hBN tunnel barriers for practical graphene spintronics applications. With such enhanced spin-injection and detection polarizations, we report a record two-terminal (inverted) spin-valve signals up to 800 Ω with a magnetoresistance ratio of 2.7%, and achieve spin accumulations up to 4.1 meV. We propose how these numbers can be increased further, for future technologically relevant graphene based spintronic devices.

We study fully hexagonal boron nitride (hBN) encapsulated graphene spin valve devices at room temperature. The device consists of a graphene channel encapsulated between two crystalline hBN flakes: thick-hBN flake as a bottom gate dielectric substrate which masks the charge impurities from SiO 2 /Si substrate and single-layer thin-hBN flake as a tunnel barrier. Full encapsulation prevents the graphene from coming in contact with any polymer/chemical during the lithography and thus gives homogeneous charge and spin transport properties across different regions of the encapsulated graphene. Further, even with the multiple electrodes in-between the injection and the detection electrodes which are in conductivity mismatch regime, we observe spin transport over 12.5-μm-long distance under the thin-hBN encapsulated graphene channel, demonstrating the clean interface and the pinhole-free nature of the thin hBN as an efficient tunnel barrier.

The current research in graphene spintronics strives for achieving a long spin lifetime, and efficient spin injection and detection in graphene. In this article, we review how hexagonal boron nitride (hBN) has evolved as a crucial substrate, as an encapsulation layer, and as a tunnel barrier for manipulation and control of spin lifetimes and spin injection/detection polarizations in graphene spin valve devices. First, we give an overview of the challenges due to conventional SiO2 substrate for spin transport in graphene followed by the progress made in hBN based graphene heterostructures. Then we discuss in detail the shortcomings and developments in using conventional oxide tunnel barriers for spin injection into graphene followed by introducing the recent advancements in using the crystalline single/bi/tri-layer hBN tunnel barriers for an improved spin injection and detection which also can facilitate two-terminal spin valve and Hanle measurements, at room temperature, and are of technological importance. A special case of bias induced spin polarization of contacts with exfoliated and chemical vapour deposition (CVD) grown hBN tunnel barriers is also discussed. Further, we give our perspectives on utilizing graphene-hBN heterostructures for future developments in graphene spintronics.

We study room-temperature spin transport in graphene devices encapsulated between a layer-by-layer-stacked two-layer-thick chemical vapor deposition (CVD) grown hexagonal boron nitride (hBN) tunnel barrier, and a few-layer-thick exfoliated-hBN substrate. We find mobilities and spin-relaxation times comparable to that of SiO 2 substrate-based graphene devices, and we obtain a similar order of magnitude of spin relaxation rates for both the Elliott-Yafet and D'Yakonov-Perel' mechanisms. The behavior of ferromagnet/two-layer-CVDhBN/graphene/hBN contacts ranges from transparent to tunneling due to inhomogeneities in the CVD-hBN barriers. Surprisingly, we find both positive and negative spin polarizations for high-resistance two-layer-CVDhBN barrier contacts with respect to the low-resistance contacts. Furthermore, we find that the differential spininjection polarization of the high-resistance contacts can be modulated by dc bias from −0.3 to +0.3 V with no change in its sign, while its magnitude increases at higher negative bias. These features point to the distinctive spin-injection nature of the two-layer-CVD-hBN compared to the bilayer-exfoliated-hBN tunnel barriers.

The electronic properties of large‐area graphene transistors (1 mm × 1 mm) prepared from commercially available graphene on silicon/silicon dioxide modified by self‐assembled bis‐urea‐terthiophene (T3) and bis‐urea‐nonane (C9) molecular wires are reported. Gate spectroscopy on molecularly modified graphene transistors show that the electronic interaction between the molecular wires and the graphene is weak compared to the effect of unwanted dopants.

We characterize the spin injection into bilayer graphene fully encapsulated in hBN using trilayer (3L) hexagonal boron nitride (hBN) tunnel barriers. As a function of the DC bias, the differential spin injection polarization is found to rise up to -60% at -250 mV DC bias voltage. We measure a DC spin polarization of ∼ 50%, a 30% increase compared to 2L-hBN. The large polarization is confirmed by local, two terminal spin transport measurements up to room temperature. We observe comparable differential spin injection efficiencies from Co/2L-hBN and Co/3L-hBN into graphene and conclude that possible exchange interaction between cobalt and graphene is likely not the origin of the bias dependence. Furthermore, our results show that local gating, arising from the applied DC bias is not responsible for the DC bias dependence. Carrier density dependent measurements of the spin injection efficiency are discussed, where we find no significant modulation of the differential spin injection polarization. We also address the bias dependence of the injection of in-plane and out-of-plane spins and conclude that the spin injection polarization is isotropic and does not depend on the applied bias.

In graphene spintronics, interaction of localized magnetic moments with the electron spins paves a new way to explore the underlying spin relaxation mechanism. A self-assembled layer of organic cobalt-porphyrin (CoPP) molecules on graphene provides a desired platform for such studies via the magnetic moments of porphyrin-bound cobalt atoms. In this work a study of spin transport properties of graphene spin-valve devices functionalized with such CoPP molecules as a function of temperature via non-local spin-valve and Hanle spin precession measurements is reported. For the functionalized (molecular) devices, we observe a slight decrease in the spin relaxation time (τs), which could be an indication of enhanced spin-flip scattering of the electron spins in graphene in the presence of the molecular magnetic moments. The effect of the molecular layer is masked for low quality samples (low mobility), possibly due to dominance of Elliot-Yafet (EY) type spin relaxation mechanisms. Graphene, one atom thick layer of sp 2 carbon atoms, has potential for spintronic applications due to theoretically predicted high spin relaxation time (τ s ≈ 100 ns) and long spin diffusion length (λ s ≈ 100 µm) 1,2 . These exceptional properties are attributed to negligible spin orbit coupling and weak hyperfine interaction due to the low atomic mass of carbon 3 . However, the maximum reported experimental values demonstrate λ s of about 12 µm 4 for encapsulated graphene and τ s about 2.7 ns for the hydrogenated graphene 5 , which although remarkable when compared with other metals and semiconductors, are still lower by more than an order in magnitude than the theoretically predicted values. A mismatch between theory and experiments suggests towards external factors such as impurities/defects present near the graphene lattice, which dominate the spin relaxation process and result in a lower value for λ s .In order to probe the role of impurities on spin transport, one can systematically introduce them to graphene. In recent years, different research groups have demonstrated several ways of introducing impurities (magnetic and non-magnetic) in graphene such as doping with adatoms, introducing defects and chemicalfunctionalization 6-10 , each method introducing a different spin relaxation source. For example heavy metal atoms such as Au can change the spin transport properties in graphene via spin orbit coupling 11 . On the other hand, light metal (Mg) ions can introduce charge impurity scattering of spins in graphene 12 , although the experimental study rules out the role of this mechanism 13 . A significant change in the spin transport properties of graphene was reported in the presence of magnetic moments 14 , which can be introduced via hydrogenation or by introducing vacancies in the graphene lattice. Remarkably, recent weak localization measurements on graphene 15 also show that magnetic impurities could play a key role in limiting the spin relaxation time in graphene. As proposed by Fabian et al. 16 , if the localized moments are presen...

We study the spin injection efficiency into single and bilayer graphene on the ferrimagnetic insulator Yttrium-Iron-Garnet (YIG) through an exfoliated tunnel barrier of bilayer hexagonal boron nitride (hBN). The contacts of two samples yield a resistance-area product between 5 and 30 kΩµm 2 . Depending on an applied DC bias current, the magnitude of the non-local spin signal can be increased or suppressed below the noise level. The spin injection efficiency reaches values from -60% to +25%. The results are confirmed with both spin valve and spin precession measurements. The proximity induced exchange field is found in sample A to be (85 ± 30) mT and in sample B close to the detection limit. Our results show that the exceptional spin injection properties of bilayer hBN tunnel barriers reported by Gurram et al. are not limited to fully encapsulated graphene systems but are also valid in graphene/YIG devices. This further emphasizes the versatility of bilayer hBN as an efficient and reliable tunnel barrier for graphene spintronics.