Our liposuctioned autologous fat injection histologically offered long-term improvement in patients with impaired glottal closure from vocal fold paralysis.

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Cerium dioxide ͑CeO 2 ͒ films were prepared by chemical vapor deposition ͑CVD͒ using tetrakis͑3-methyl-3-pentoxy͒cerium, Ce͓OC͑C 2 H 5 ͒ 2 CH 3 ͔ 4 . The capacitance-voltage ͑C-V͒ characteristics of an as-deposited CeO 2 metal-insulator-semiconductor ͑MIS͒ capacitor represented a large flatband voltage shift of 1.0 V as well as a large hysteresis of 1.0 V. After annealing at a rather low temperature of 500°C, the C-V characteristics were improved remarkably. The hysteresis decreased to 0.15 V and the flatband voltage shift almost disappeared. The slope of the C-V curve near the flatband voltage for the annealed samples became steep, especially after annealing in the oxidizing ambient. The leakage current decreased by four orders of magnitude after annealing in O 2 and even more in the O-radical ambient. The resultant CeO 2 on Si had the dielectric constant of 18.0, equivalent to the HfO 2 film, and also as low leakage current of 1.0 ϫ 10 −7 A/cm 2 as Hf silicate.There has been increasing demand for a high dielectric constant ͑high-k͒ insulating material utilized for sub-100 nm metal-insulatorsemiconductor ͑MIS͒ devices. The study for high-k insulating films seems to have been focused on HfO 2 or ZrO 2 for their high applicability to the electronic devices. Insulating films using these materials, however, have some electrical issues. For instance, the carrier mobility in the MIS devices adopting HfO 2 as an insulating film was decreased by the introduced defects at the interface.Due to a lattice mismatch as small as 0.35% with Si, CeO 2 should be a potential material to reduce the defect density at the interface. Furthermore, CeO 2 has suitable properties of a chemical stability and a high dielectric constant of 26 for the MIS device application.Although a lot of work for deposition characteristics and crystallinity of CeO 2 films on Si substrates prepared by means of CVD, electron beam evaporation, 1,2 laser ablation, 3,4 sputtering, 5 and solgel process 6 has been reported, the electrical characteristics of the deposited CeO 2 /Si structure 7 are not fully understood. In this paper, we report the electrical property of CeO 2 films deposited by MOCVD on Si͑100͒ substrates and also the postannealing effect in various ambients, including an oxidizing one, resulting in a remarkable improvement of the electrical properties. ExperimentalCerium dioxide films were deposited by chemical vapor deposition ͑CVD͒ using a liquid alcoxy Ce source, tetrakis͑3-methyl-3-pentoxy͒cerium, Ce͓OC͑C 2 H 5 ͒ 2 CH 3 ͔ 4 , on p-type Si͑100͒ substrates by the pyrolysis of the source without any oxidant assistance. Prior to the deposition, Si substrates were dipped in a diluted hydrofluoric acid ͑HF͒ solution to remove native oxide layers. The source vapor carried with Ar was introduced into the chamber by the bubbling technique in a source bottle maintained at an elevated temperature to obtain a desired vapor pressure. The deposition ambient pressure, the deposition temperature, the source temperature and the carrier flow rate were 50 Pa, ...