Exchange-biased magnetic tunnel junctions (MTJs) with interposed Fe1−xPtx metal alloy layers between the Al oxide barrier and the ferromagnetic electrodes maintain large tunneling magnetoresistance (TMR) after thermal treatment in excess of 400 °C, owing to an improved barrier interface. After 400 °C annealing, TMRs of MTJs with Fe1−xPtx (x=0.1–0.2) exhibit over 40% and retain 30% TMR after 420 °C annealing. The tunnel barrier height derived from the current–voltage curve fitted to the Simmons equation increases with richer Pt content. Secondary ion mass spectroscopy depth profiles and cross-section transmission electron micrographs of MTJs with Fe0.85Pt0.15 show a clear interface around the Al oxide barrier even after annealing at 400 °C.
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