No abstract

No abstract

Thin films of rare earth (RE)-doped BiFeO3 (where RE=Sm, Ho, Pr and Nd) were grown on LaAlO3 substrates by using the pulsed laser deposition technique. All the films show a single phase of rhombohedral structure with space group R3c. The saturated magnetization in the Ho- and Sm-doped films is much larger than the values reported in the literature, and is observed at quite a low field of 0.2 T. For Ho and Sm doping, the magnetization increases as the film becomes thinner, suggesting that the observed magnetism is mostly due to a surface effect. In the case of Nd doping, even though the thin film has a large magnetic moment, the mechanism seems to be different.

VO 2 thin-film planar-type junctions with the size of 1500 m in width and 10 m in length were fabricated on Al 2 O 3 ͑0001͒ substrates, and the electric-field-induced resistance switching ͑EIRS͒ characteristics were investigated at hydrostatic pressures up to 2 GPa and room temperature. The resistance in the electric-fieldinduced low resistance state ͑E-LRS͒ was revealed to be insensitive to the hydrostatic pressure, in contrast to the apparent suppression of resistance in the temperature-induced low resistance state. The critical current to induce E-LRS is increased as the pressure is increased, while the voltage at the transition is independent of the pressure. These results indicate a picture in VO 2 that not a Joule heating but a reversible breakdown triggers EIRS, and that the electric current of huge density maintains filamentary E-LRS regions.

No abstract