Low-temperature thermoelectric properties of α- and β-Zn4Sb3 bulk crystals prepared by a gradient freeze method and a spark plasma sintering method

Souma, Takeshi; Nakamoto, G.; Kurisu, Makio

doi:10.1016/s0925-8388(02)00113-5

Cited by 87 publications

(94 citation statements)

References 7 publications

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“…As the sample is cooled down from room temperature, an anomalous peak is observed at about 250 K, indicating the ␣-␤ phase transition in Zn 4 Sb 3. 17, 18 The plateau in resistivity, observed between 230 K and 140 K, may be due to the effect of an impurity scattering process, arising from a phase impurity caused by a ''premature effect'' of the order-disorder phase transition at 250 K. A second phase transition at T Ϸ 234 K has been reported by another group. 19 The slope in resistivity changes below 140 K, decreasing with decrease in temperature in a semimetallic manner.…”

Section: Resultsmentioning

confidence: 93%

Effect of disorder on the thermal transport and elastic properties in thermoelectricZn4Sb3

et al. 2006

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Zn 4 Sb 3 undergoes a phase transition from ␣ to ␤ phase at T 1 Ϸ 250 K. The high temperature ␤-Zn 4 Sb 3 phase has been widely investigated as a potential state-of-the-art thermoelectric ͑TE͒ material, due to its remarkably low thermal conductivity. We have performed electronic and thermal transport measurements exploring the structural phase transition at 250 K. The ␣ to ␤ phase transition manifests itself by anomalies in the resistivity, thermopower, and specific heat at 250 K as well as by a reduction in the thermal conductivity as Zn 4 Sb 3 changes phase from the ordered ␣ to the disordered ␤-phase. Moreover, measurements of the elastic constants using resonant ultrasound spectroscopy ͑RUS͒ reveal a dramatic softening at the order-disorder transition upon warming. These measurements provide further evidence that the remarkable thermoelectric properties of ␤-Zn 4 Sb 3 are tied to the disorder in the crystal structure.

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Section: Resultsmentioning

confidence: 93%

Effect of disorder on the thermal transport and elastic properties in thermoelectricZn4Sb3

et al. 2006

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“…The temperature dependence at low temperatures of the thermal expansion coefficient from the c lattice parameter cannot be calculated due to insufficient precision in the lattice parameter values at low temperatures. Only the 100-300-K region was fitted linearly (see 15,23,33 The Grüneisen parameter indicates anharmonicity in the lattice dynamics and the typical values for semiconductors are between 1 and 2. 34 The thermal conductivity is connected to the anharmonicity in the material and therefore the Grüneisen parameter is a useful parameter for the comparison of thermoelectric materials.…”

Section: A Structurementioning

confidence: 99%

Lattice dynamics in the thermoelectric Zintl compound Yb14MnSb11

et al. 2011

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The density of phonon states in the thermoelectric material Yb 14 MnSb 11 has been studied first by inelastic neutron scattering and second in an element-specific way by nuclear inelastic x-ray scattering. The low sound velocity of 1880(50) m/s as obtained from the density of phonon states can be identified as an important reason for the low heat transport in this system. The high melting temperature of Yb 14 MnSb 11 contrasts with the low energy of all phonons (<25 meV) and relates to an unusual lack of softening of phonon modes with temperature, when comparing the phonon density of states observed at ambient temperatures and at 1200 K. We have also measured the density of phonon states of the related Eu 14 MnSb 11 compound and of the thermoelectric Zintl phase Zn 4 Sb 3 in order to compare with related thermodynamic properties of Yb 14 MnSb 11 and to elucidate the different mechanisms of the heat conductivity reduction in Zintl phases.

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“…4 Melt-growth and powder-metallurgy methods have been used to prepare b-Zn 4 Sb 3 materials. [5][6][7][8][9][10] b-Zn 4 Sb 3 crystals prepared by conventional melt growth contain many cracks that result from thermal stress because of c-to b-phase transformations. Recently, a crack-free single-phase b-Zn 4 Sb 3 material was obtained using direct melting followed by a two-stage heat treatment, also being reported elsewhere.…”

Section: Introductionmentioning

confidence: 99%

RETRACTED ARTICLE: Single-Phase β-Zn4Sb3 Prepared by a Mechanical Grinding Method

Okamura

Ueda

Hasezaki

2009

Journal of Elec Materi

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Single-phase b-Zn 4 Sb 3 materials were prepared by mechanical grinding (MG). Source materials for the Zn 4 Sb 3 ingots were prepared using three different processes after the direct melting of constituent elements. In process 1, the ingot was obtained by quenching the melt in water within an evacuated quartz ampoule. In process 2, the ingot was heat-treated for 100 h at 723 K after process 1. In process 3, the ingot was heat-treated for a total of 200 h in two stages at 723 K and 673 K after process 1. The resultant ingots were mechanically ground and sintered at 623 K by hot pressing. The sintered materials were characterized by x-ray diffraction, differential thermal analysis (DTA), and thermoelectric property measurements. The thermal conductivity of the sintered materials was 0.88 W m À1 K À1 at room temperature, being slightly lower than that reported for the materials prepared by a conventional method. Results indicate that the dimensionless figure of merit of the single-phase b-Zn 4 Sb 3 ranged from 1.06 to 1.31 at 573 K.

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Low-temperature thermoelectric properties of α- and β-Zn4Sb3 bulk crystals prepared by a gradient freeze method and a spark plasma sintering method

Cited by 87 publications

References 7 publications

Effect of disorder on the thermal transport and elastic properties in thermoelectricZn4Sb3

Effect of disorder on the thermal transport and elastic properties in thermoelectricZn4Sb3

Lattice dynamics in the thermoelectric Zintl compound Yb14MnSb11

RETRACTED ARTICLE: Single-Phase β-Zn4Sb3 Prepared by a Mechanical Grinding Method

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