The simple additive form of the dielectric function is used to describe the IR reflectance of the GaAlAs/GaAs system. A detailed numerical study shows a different degree of importance of the parameters involved. A reasonable correspondence is found between the experimental and model spectra; the discrepancies are, most probably due to the aluminium concentration gradient in the GaAlAs layer. The values of some important parameters (aluminium content and the plasma frequency) may be determined directly from the characteristic features of the spectra without the elaborate fitting procedure provided the layer thickness is not too small.
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