High-temperature (HT) annealing effects on the evolution of strain in AlN films grown on sapphire have been investigated. It is found that there is a significant transition behavior from tensile to compressive strain in AlN before and after HT annealing at an optimal temperature of 1700 °C. Based on a microstructural analysis, it is clarified that the HT annealing will result in the (1) disappearance of grains that account for the tensile stress before HT annealing, (2) generation of a new interface that has little influence on the lattice constant upper/below this interface, and (3) regular 8/9 arrangement of misfit dislocation at the AlN/sapphire interface that relieves almost all stress associated with lattice mismatch. It is thus deduced that the remnant compressive strain in AlN after HT annealing mainly comes from the cooling down process due to thermal mismatch between sapphire and AlN. This understanding of the annealing effect is certainly of great significance in AlN materials science and technology.
Growth behaviors of AlN on hexagonal configuration hole-type and truncated-cone-pillar-type nano-patterned sapphire substrates (NPSSs) have been investigated.
AlGaN-based deep-ultraviolet light emitting diodes adopting an embedded delta-AlGaN thin layer with an Al composition higher than that in conventional barriers have been investigated. The experimental result shows that when the current is below 250 mA, the maximum of the external quantum efficiency and light output power for the proposed structure reach severally 1.38% and 10.1 mW, which are enhanced significantly by 160% and 197%, respectively, compared to the conventional ones, showing a tremendous improvement. We attribute that to the inserted delta-thin layer's modulation effect on the energy band, namely, accelerating holes to cross the high barrier with very large kinetic energy, thus increasing the hole injection into the active regions. Meanwhile, the electron concentration within the active regions is enhanced as well because of the accompanying additional effect of the delta-AlGaN thin layer being an electron barrier to block electrons escaping from the active region.
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