Greatly enhanced performance of AlGaN-based deep ultraviolet light emitting diodes by introducing a polarization modulated electron blocking layer

Lang, Jing; Xu, Fujun; Ge, Weikun; Liu, B. Y.; Zhang, N.; Sun, Yan; Wang, J. M.; Wang, M. X.; Xie, Nan; Fang, Xin; Kang, Xiaoning; Qin, Zhixin; Yang, Xuelin; Wang, X. Q.; Shen, Bo

doi:10.1364/oe.27.0a1458

Cited by 20 publications

(8 citation statements)

References 17 publications

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“…A full-thickness excisional wound was created on dorsal skin using a 7-mm punch biopsy without damaging the underlying muscles, as we previously described. 3 , 24 , 45 For topical delivery of miR inhibitors, anti-miR miRNA inhibitor (Thermo Fisher Scientific), 100 nM miRNA inhibitor in Lipofectamine™ RNAiMAX (Invitrogen) in 50 μL of Opti-MEM were topically placed onto the wound bed immediately after punch. The grouping was as follows: (1) db/db wound with 100 nM scrambled control (anti-miR negative control #1, Ambion); (2) db/db wound with 100 nM miR-200b inhibitor (50 nM hsa-miR-200-5p and 50 nM hsa-miR-200-3p, Ambion); (3) db/db wound with 50 nM miR-466a inhibitor (25 nM mmu-miR-466-5p and 25 nM mmu-miR-466-3p, Ambion) and 50 nM of miR-200b inhibitor on days 0, 2, and 4, followed by 100 nM miR-200b inhibitor for the remaining days; and (4) db/+ wound with 100 nM scramble control.…”

Section: Methodsmentioning

confidence: 99%

MicroRNA-466 and microRNA-200 increase endothelial permeability in hyperglycemia by targeting Claudin-5

Kujawa¹,

O’Meara²,

Li³

et al. 2022

Molecular Therapy - Nucleic Acids

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Section: Methodsmentioning

confidence: 99%

MicroRNA-466 and microRNA-200 increase endothelial permeability in hyperglycemia by targeting Claudin-5

Kujawa¹,

O’Meara²,

Li³

et al. 2022

Molecular Therapy - Nucleic Acids

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“…A similar structure was designed by the team of Ge Weikun of Beijing University as a multilayer electron barrier layer with gradual changes in thickness and Al composition. While suppressing the overflow of electrons, it also increased the emissivity of holes and greatly improved quantum efficiency [69]. Meanwhile, Hu et al reported that an electron deceleration layer with a superlattice structure can be added between the n-type layer and the active region to alleviate the electron overflow effect [70].…”

Section: Carrier Transport and Internal Quantum Efficiencymentioning

confidence: 99%

Perspectives on UVC LED: Its Progress and Application

et al. 2021

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High-quality epitaxial layers are directly related to internal quantum efficiency. The methods used to design such epitaxial layers are reviewed in this article. The ultraviolet C (UVC) light-emitting diode (LED) epitaxial layer structure exhibits electron leakage; therefore, many research groups have proposed the design of blocking layers and carrier transportation to generate high electron–hole recombination rates. This also aids in increasing the internal quantum efficiency. The cap layer, p-GaN, exhibits high absorption in deep UV radiation; thus, a small thickness is usually chosen. Flip chip design is more popular for such devices in the UV band, and the main factors for consideration are light extraction and heat transportation. However, the choice of encapsulation materials is important, because unsuitable encapsulation materials will be degraded by ultraviolet light irradiation. A suitable package design can account for light extraction and heat transportation. Finally, an atomic layer deposition Al2O3 film has been proposed as a mesa passivation layer. It can provide a low reverse current leakage. Moreover, it can help increase the quantum efficiency, enhance the moisture resistance, and improve reliability. UVC LED applications can be used in sterilization, water purification, air purification, and medical and military fields.

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“…In 2017 and 2018, Zhang et al modified the barrier height for EBL by utilizing p -Al 0.60 Ga 0.40 N (L2)/Al 0.50 Ga 0.50 N/ p -Al 0.60 Ga 0.40 N (L1) EBL and grading the alloy composition respectively, to guarantees a smooth hole injection into the active region 166 , 167 . In 2019, Lang et al adopted an Al-composition and thickness-graded multiple quantum barriers structure as polarization-modulated EBL to enhance the carrier transport in DUV LED 168 . Furthermore, hole reservoir layers with different structures, such as graded AlGaN SLs 169 , Al-composition-graded layer 112 , and inverted-V-shaped quantum barrier 170 , showed significant suppression in the efficiency droop of DUV LEDs.…”

Section: Manipulation Of Polarization Fieldsmentioning

confidence: 99%

Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes

Gao

Cai

et al. 2021

Light Sci Appl

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As demonstrated during the COVID-19 pandemic, advanced deep ultraviolet (DUV) light sources (200–280 nm), such as AlGaN-based light-emitting diodes (LEDs) show excellence in preventing virus transmission, which further reveals their wide applications from biological, environmental, industrial to medical. However, the relatively low external quantum efficiencies (mostly lower than 10%) strongly restrict their wider or even potential applications, which have been known related to the intrinsic properties of high Al-content AlGaN semiconductor materials and especially their quantum structures. Here, we review recent progress in the development of novel concepts and techniques in AlGaN-based LEDs and summarize the multiple physical fields as a toolkit for effectively controlling and tailoring the crucial properties of nitride quantum structures. In addition, we describe the key challenges for further increasing the efficiency of DUV LEDs and provide an outlook for future developments.

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Greatly enhanced performance of AlGaN-based deep ultraviolet light emitting diodes by introducing a polarization modulated electron blocking layer

Cited by 20 publications

References 17 publications

MicroRNA-466 and microRNA-200 increase endothelial permeability in hyperglycemia by targeting Claudin-5

MicroRNA-466 and microRNA-200 increase endothelial permeability in hyperglycemia by targeting Claudin-5

Perspectives on UVC LED: Its Progress and Application

Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes

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