The implementation of trap-assisted tunneling of charge carriers into numerical simulators ASPIN and DAMPS is briefly described. Important modeling details are highlighted and compared. In spite of the considerable differences in both approaches, the problems encountered and their solutions are surprisingly similar. Simulation results obtained for several tunneling recombination junctions made of amorphous silicon ͑a-Si͒, amorphous silicon carbide ͑a-SiC͒, or microcrystalline silicon ͑c-Si͒ are analyzed. Identical conclusions can be drawn using either of the simulators. Realistic performances of a-Si/ a-Si tandem solar cells can be reproduced with simulation programs by assuming that extended-state mobility increases exponentially with the electric field. The same field-enhanced mobilities are needed in single tunneling recombination junctions in order to achieve measured current levels. Temperature dependence of the current-voltage characteristics indicates that the activation energy of enhanced mobilities should be determined. Apparent discrepancies between simulation results and measurements are explained and eliminated making use of Gill's law. For application in tandem and triple solar cell structures, tunneling recombination junctions made of ͑c-Si͒ are the most promising of all examined structures.
The analytical partial capacitance methods (PCM) widely accepted for calculation of properties of capacitors with planar electrodes, coplanar strip waveguides (CPS) and coplanar waveguides (CPW) are reviewed based on the challenges met during the development and tailoring of (Ba, Sr)TiO3 thin films fabricated on different types of substrates. An alternative view on the conformal mapping method is given, a correction for electrodes of finite thickness is introduced and the applicability of easy-to-use simplified analytical equations is reviewed and extended. Calculation results obtained with different models are compared against the results of FEM numerical simulation in the parameter range relevant for development of tuneable ferroelectric films. The models were found to be less accurate than previously reported. Accordingly, guidelines for extending the applicability domain and for minimizing the inherent errors of the analytical models are presented. The discussion is focused on the possible improvements of the measurement techniques.
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