Low cost surface passivation for p-type mc-Si based on pseudobinary alloys (Al2O3)x(TiO2)1−x

Vitanov, P.; Agostinelli, G.; Harizanova, A.; Ivanova, T.; Vukadinovic, M.; Quang, N. Le; Beaucarne, G.

doi:10.1016/j.solmat.2006.03.020

Cited by 18 publications

(8 citation statements)

References 3 publications

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“…136 The search for a suitable dielectric to passivate p-type silicon surfaces has been increasingly intensive since the early 2000s. 37,[137][138][139][140][141] A breakthrough came with the advent of aluminum oxide, which is a negative fixed-charge dielectric, 39,40 essentially avoiding the shunting path caused by silicon nitride in locally contacted solar cells. Such films show a very high negative fixed-charge density (around 10 13 cm À2 ), 27 strongly attracting holes to the surface and thus creating a p + accumulation layer, which helps to suppress electron recombination at the rear surface.…”

Section: Review Energy and Environmental Sciencementioning

confidence: 99%

High-efficiency crystalline silicon solar cells: status and perspectives

Battaglia

Cuevas

Wolf

2016

Energy Environ. Sci.

883

575

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Section: Review Energy and Environmental Sciencementioning

confidence: 99%

High-efficiency crystalline silicon solar cells: status and perspectives

Battaglia

Cuevas

Wolf

2016

Energy Environ. Sci.

883

575

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“…It is desirable because it is deposited at temperatures below 200 1C [22,23]. Thus a passivation study of the cells was performed using atomic layer deposited (ALD) alumina in a custom designed viscous flow reactor.…”

Section: Experimental Optimization Of Cell Passivationmentioning

confidence: 99%

Microsystems enabled photovoltaics: 14.9% efficient 14μm thick crystalline silicon solar cell

Cruz‐Campa

Okandan

Resnick

et al. 2011

Solar Energy Materials and Solar Cells

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“…Many technologies can be employed to grow TiO 2 thin films, such as PECVD, APCVD, PLD, spray pyrolysis, reactive sputtering, and sol-gel [13]. In this paper, we grew TiO 2 thin films on Si wafers by atomic layer deposition (ALD) which performs excellent uniformity, accurate thickness control, and almost 100% step coverage on substrate surface [14].…”

Section: Introductionmentioning

confidence: 99%

Surface Passivation and Antireflection Behavior of ALD on n-Type Silicon for Solar Cells

Wang

Cheng

et al. 2013

International Journal of Photoenergy

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Atomic layer deposition, a method of excellent step coverage and conformal deposition, was used to deposit TiO2thin films for the surface passivation and antireflection coating of silicon solar cells. TiO2thin films deposited at different temperatures (200°C, 300°C, 400°C, and 500°C) on FZ n-type silicon wafers are in the thickness of 66.4 nm ± 1.1 nm and in the form of self-limiting growth. For the properties of surface passivation, Si surface is effectively passivated by the 200°C deposition TiO2thin film. Its effective minority carrier lifetime, measured by the photoconductance decay method, is improved 133% at the injection level of cm−3. Depending on different deposition parameters and annealing processes, we can control the crystallinity of TiO2and find low-temperature TiO2phase (anatase) better passivation performance than the high-temperature one (rutile), which is consistent with the results of work function measured by Kelvin probe. In addition, TiO2thin films on polished Si wafer serve as good ARC layers with refractive index between 2.13 and 2.44 at 632.8 nm. Weighted average reflectance at AM1.5G reduces more than half after the deposition of TiO2. Finally, surface passivation and antireflection properties of TiO2are stable after the cofire process of conventional crystalline Si solar cells.

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Low cost surface passivation for p-type mc-Si based on pseudobinary alloys (Al2O3)x(TiO2)1−x

Cited by 18 publications

References 3 publications

High-efficiency crystalline silicon solar cells: status and perspectives

High-efficiency crystalline silicon solar cells: status and perspectives

Microsystems enabled photovoltaics: 14.9% efficient 14μm thick crystalline silicon solar cell

Surface Passivation and Antireflection Behavior of ALD on n-Type Silicon for Solar Cells

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