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International audienceA dual-mode laser operating in the excited states (ESs) of a quantum dot is realized by combining asymmetric pumping and external optical feedback stabilization. In generating two single-mode emission peaks, a mode separation ranging from 1.3-THz to 3.6-THz is demonstrated over temperature. This effect is attributed to the unique carrier dynamics of the quantum-dot gain medium via the excited state inhomogeneous linewidth coupled with a proper external control. These results are particularly important towards the development of future THz optoelectronic sources with compact size, low fabrication cost, and high performance

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Articles you may be interested inTuning the external optical feedback-sensitivity of a passively mode-locked quantum dot laser Appl. Phys. Lett. 105, 041112 (2014); 10.1063/1.4891576Effect of the number of quantum dot layers and dual state emission on the performance of InAs/InGaAs passively mode-locked lasers

The contribution of facet defect currents to the overall generation-recombination current of laser diodes operating near 800 nm is quantified experimentally, using the dependence of current on cavity length to isolate facet effects. The results show that facet currents exhibit an ideality factor much greater than 2, while currents associated with the interior of the laser diode stripes exhibit an ideality factor of 2. These differences in behavior provide an approach to infer additional details of defect evolution in aging studies of semiconductor laser diodes.

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