Analytical Modeling of the Temperature Performance of Monolithic Passively Mode-Locked Quantum Dot Lasers

Crowley, M. T.; Murrell, David; Patel, Nishant; Breivik, Magnus; Lin, Chang-Yi; Li, Yan; Fimland, B. O.; Lester, L. F.

doi:10.1109/jqe.2011.2157953

Cited by 19 publications

(18 citation statements)

References 29 publications

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“…Consequently, high temperature operation favors devices having low absorber to gain length ratios. This is consistent with the findings of an analytical model that predicted regions of mode-locking stability based on measured gain and absorption data [11]. It has been experimentally shown that the L a =0.8-mm device maintains fundamental MLL operation from the GS up to 93 o C. To the best of our knowledge, this is the highest temperature that pulses from the GS of a QD MLL have been demonstrated.…”

Section: Optical and Temporal Pulse Characteristicssupporting

confidence: 88%

Characteristics of passively mode-locked quantum dot lasers from 20 to 120°C

et al. 2013

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In this paper, performance of monolithic quantum dot passively mode-locked lasers over broad temperature excursions is characterized. It is shown that there is a linear dependence between absorber to gain length ratio and the characteristic temperature that a device transitions from ground-state to excited-state lasing when the saturable absorber is grounded. The pulse shape and optical spectrum characteristics are examined in detail around these transition regimes. Experimental operational maps have also been constructed showing the range of biasing conditions that produce stable mode-locking across a wide range of temperatures. A comparison is made between regions of mode-locking stability for two devices having the same absorber to gain length ratio, with varying ridge waveguide widths. Finally, gain and absorption characteristics are derived from measurements of amplified spontaneous emission, and a correlation between reduced values of unsaturated absorption and reduced time-bandwidth product is shown. Key features in the experimental operational maps and their respective significance on the operation and design of future devices is discussed

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Section: Optical and Temporal Pulse Characteristicssupporting

confidence: 88%

Characteristics of passively mode-locked quantum dot lasers from 20 to 120°C

et al. 2013

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“…The details of device structure, experimental data and results can be found in [9]. The approach used herein follows that discussed in [13] and involves extracting parameters appearing on the right sides of equations (7), (8), (12) and (13) from quantities measured as a function of gain-section current density, wavelength, absorber reverse bias and temperature using the segmented contact method 14,15 .…”

Section: Modeling and Experimental Resultsmentioning

confidence: 99%

“…In the following, a systematic method to transform physically measured parameters from the gain and loss spectra into seed conditions for the DDE model is discussed. The threshold condition for lasing can be expressed from equation (2) in [9] as follows:…”

Section: Theoretical Backgroundmentioning

confidence: 99%

“…Secondly, numerical simulations allow a detailed study of how the nonlinear dynamics of the output are impacted by a variation of the input parameters, information that is critical to achieving controllability over device performance. To this end, this paper builds on our previous efforts to better understand the pulse characteristics and mode locking stability of passively mode-locked QDMLLs 8,9 , with the objective of going a step further in providing a predictive guideline toward achieving higher pulse repetition rates. In continuation of our previous work, a nonlinear delay differential equation model [10][11][12] seeded with parameters measured on an actual device 13 is used to simulate the output mode locking regimes as input parameters are varied.…”

Section: Introductionmentioning

confidence: 99%

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Modeling and characterization of pulse shape and pulse train dynamics in two-section passively mode-locked quantum dot lasers

Raghunathan

Mee

Crowley³

et al. 2013

SPIE Proceedings

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A nonlinear delay differential equation model for passive mode-locking in semiconductor lasers, seeded with parameters extracted from the gain and loss spectra of a quantum dot laser, is employed to simulate and study the dynamical regimes of mode-locked operation of the device. The model parameter ranges corresponding to these regimes are then mapped to externally-controllable parameters such as gain current and absorber bias voltage. Using this approach, a map indicating the approximate regions corresponding to fundamental and harmonically mode locked operation is constructed as a function of gain current and absorber bias voltage. This is shown to be a highly useful method of getting a sense of the highest repetition rates achievable in principle with a simple, two-section device, and provides a guideline toward achieving higher repetition rates by simply adjusting external biasing conditions instantaneously while the device is in operation, as opposed to re-engineering the device with additional passive or saturable absorber sections. The general approach could potentially aid the development of numerical modeling techniques aimed at providing a systematic guideline geared toward developing microwave and RF photonic sources for THz applications.

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“…Knowledge of the temperature performance of this material system is of profound importance to ensure the optimization of our VECSELs. Previously, we have used the segmented contact method to acquire a better understanding of the temperature dependence of the gain and loss spectra in dots-in-a-well active regions [4,5]. These previous studies act as a valuable baseline for future work by giving us valuable insight into the temperature dependencies seen in semiconductor laser active regions.…”

Section: Overviewmentioning

confidence: 99%

Supplemental Task-High Power Lasers

Lester¹,

Balakrisnan²

2011

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Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing this collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden to Department of Defense, Washington Headquarters Services, Directorate for Information PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES) 8. PERFORMING ORGANIZATION REPORT NUMBER SPONSORING / MONITORING AGENCY NAME(S) AND ADDRESS(ES) 10. SPONSOR/MONITOR'S ACRONYM(S) SPONSOR/MONITOR'S REPORT NUMBER(S) UnlimitedThe researchers made significant progress in all of the proposed research areas. The first task involved the growth and characterization of 1040 nm vertical external cavity surface emitting lasers (VECSELs). These devices have been grown by MOCVD and have been subjected to temperature-dependent reflectivity studies to optimize the alignment of the gain peak with the micro-cavity as well as examining their continuous wave output power properties. Secondly, based on extensive electronic structure simulations, single and dual tunnel-injection based quantum dot epi-structures have been designed. These structures leverage from the already established world-class quantum dot VECSEL research at CHTM.Vertical external cavity surface emitting lasers, crystal growth, semiconductor laser epi-structure design, quantum wells, quantum dots. AbstractThe researchers made significant progress in all of the proposed research areas. The first task involved the growth and characterization of 1040 nm vertical external cavity surface emitting lasers (VECSELs).These devices have been grown by MOCVD and have been subjected to temperature-dependent reflectivity studies to optimize the alignment of the gain peak with the micro-cavity as well as examining their continuous wave output power properties. Secondly, based on extensive electronic structure simulations, single and dual tunnel-injection based quantum dot epi-structures have been designed. These structures leverage from the already established world-class quantum dot VECSEL research at CHTM.

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Analytical Modeling of the Temperature Performance of Monolithic Passively Mode-Locked Quantum Dot Lasers

Cited by 19 publications

References 29 publications

Characteristics of passively mode-locked quantum dot lasers from 20 to 120°C

Characteristics of passively mode-locked quantum dot lasers from 20 to 120°C

Modeling and characterization of pulse shape and pulse train dynamics in two-section passively mode-locked quantum dot lasers

Supplemental Task-High Power Lasers

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