We show experimentally that multilayer graphene grown on the carbon terminated SiC(0001[over ]) surface contains rotational stacking faults related to the epitaxial condition at the graphene-SiC interface. Via first-principles calculation, we demonstrate that such faults produce an electronic structure indistinguishable from an isolated single graphene sheet in the vicinity of the Dirac point. This explains prior experimental results that showed single-layer electronic properties, even for epitaxial graphene films tens of layers thick.

The addition of nitrophenyl groups to the surface of few-layer epitaxial graphene (EG) by the formation of covalent carbon-carbon bonds changed the electronic structure and transport properties of the EG from near-metallic to semiconducting.

No abstract

Multilayer epitaxial graphene is investigated using far infrared transmission experiments in the different limits of low magnetic fields and high temperatures. The cyclotron-resonance-like absorption is observed at low temperature in magnetic fields below 50 mT, probing the nearest vicinity of the Dirac point. The carrier mobility is found to exceed 250,000 cm2/(V x s). In the limit of high temperatures, the well-defined Landau level quantization is observed up to room temperature at magnetic fields below 1 T, a phenomenon unusual in solid state systems. A negligible increase in the width of the cyclotron resonance lines with increasing temperature indicates that no important scattering mechanism is thermally activated.