Approaching the Dirac Point in High-Mobility Multilayer Epitaxial Graphene

Орлита, М.; Faugeras, C.; Plochocka, P.; Neugebauer, Petr; Martinez, G.; Maude, D. K.; Barra, Anne‐Laure; Sprinkle, M.; Berger, Claire; Heer, Walt A. de; Potemski, M.

doi:10.1103/physrevlett.101.267601

Cited by 613 publications

(475 citation statements)

References 37 publications

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“…21 The obtained v F ¼ 1.03(60.01) Â 10 6 m s À1 for our FLG is in a very good agreement with the results reported previously for decoupled C-face graphene on 4H-SiC. 13,14 Note that ABstacked inclusions, showing sub-linear dependence of the LL transition energy on the magnetic field, are commonly reported for C-face graphene on 4H-and 6H-SiC. 15,22 In contrast, no contribution from AB-stacked defects could be observed in our C-face graphene on 3C-SiC.…”

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confidence: 88%

“…13,14 Recently, we have shown that infrared optical Hall effect (OHE) measurements, which comprise performing generalized spectroscopic ellipsometry in the presence of a magnetic field, are an excellent tool to carry out LL spectroscopy in FLG. 15,16 In this work, we combine the infrared OHE with lowenergy electron microscopy (LEEM) and micro low-energy electron diffraction (l-LEED) investigations to study the interaction between individual layers, their electronic properties, and the stacking order in FLG grown on the C-face of 3C-SiC(111).…”

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confidence: 99%

“…For instance, scattering times of 150 fs and 200 fs were reported for 100-ML-tick C-face graphene on 4H-SiC at 1 T (Ref. 14) and for graphene flakes on SiO 2 , 23 respectively. We also note that C-face FLG grown at the same conditions as the sample here, but on 4H-SiC(000-1) shows a lower limit of the free charge carrier mobility of about 24 500 cm 2 V À1 s À1 at 1.5 K.…”

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Decoupling and ordering of multilayer graphene on C-face 3C-SiC(111)

Bouhafs

Stanishev

Zakharov

et al. 2016

Applied Physics Letters

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We show experimentally that few layer graphene (FLG) grown on the carbon terminated surface (C-face) of 3C-SiC(111) is composed of decoupled graphene sheets. Landau level spectroscopy on FLG graphene is performed using the infrared optical Hall effect. We find that Landau level transitions in the FLG exhibit polarization preserving selection rules and the transition energies obey a square-root dependence on the magnetic field strength. These results show that FLG on C-face 3C-SiC(111) behave effectively as a single layer graphene with linearly dispersing bands (Dirac cones) at the graphene K point. We estimate from the Landau level spectroscopy an upper limit of the Fermi energy of about 60 meV in the FLG, which corresponds to a carrier density below 2.5 × 1011 cm−2. Low-energy electron diffraction μ-LEED) reveals the presence of azimuthally rotated graphene domains with a typical size of ≤200 nm. μ-LEED mapping suggests that the azimuth rotation occurs between adjacent domains within the same sheet rather than vertically in the stack.

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confidence: 99%

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confidence: 99%

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Decoupling and ordering of multilayer graphene on C-face 3C-SiC(111)

Bouhafs

Stanishev

Zakharov

et al. 2016

Applied Physics Letters

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“…Comparing to mechanical exfoliation of graphene from graphite, large area epitaxial growth of graphene layers on silicon carbide (SiC) surface shows huge application potentials and has apparent technological advantages over the mechanical exfoliation method 6,7 . In this letter, we demonstrate that substitutional doping could be strongly enhanced in epitaxial graphene grown on SiC substrate comparing to that of free-standing graphene (FSG).…”

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Controlling doping in graphene through a SiC substrate: A first-principles study

2011

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Controlling the type and density of charge carriers by doping is the key step for developing graphene electronics. However, direct doping of graphene is rather challenge. Based on firstprinciples calculations, a concept of overcoming doping difficulty in graphene via substrate is reported. We find that doping could be strongly enhanced in epitaxial graphene grown on silicon carbide substrate. Compared to free-standing graphene, the formation energies of the dopants can decrease by as much as 8 eV. The type and density of the charge carriers of epitaxial graphene layer can be effectively manipulated by suitable dopants and surface passivation. More importantly, contrasting to the direct doping of graphene, the charge carriers in epitaxial graphene layer are weakly scattered by dopants due to the spatial separation between dopants and conducting channel. Finally, we show that similar idea can also be used to control magnetic properties, e.g., induces a half-metallic state in the epitaxial graphene without magnetic impurity doping.

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“…1 Though graphene provides extremely high mobility and electrical conductivity, its semi-metallic properties limit wide application in modern electronics. 2 Transition-metal dichalcogenides are, on the other hand, semiconductors with a graphene-like hexagonal structure in single or multiple layers. 3 Their band gaps, ranging approximately 1.0-2.5 eV, are normally at the K point in the Brillouin zone when direct.…”

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Highly anisotropic electronic transport properties of monolayer and bilayer phosphorene from first principles

Jin

Mullen

Kim

2016

Applied Physics Letters

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The intrinsic carrier transport dynamics in phosphorene is theoretically examined.Utilizing a density functional theory treatment, the low-field mobility and the saturation velocity are characterized for both electrons and holes in the monolayer and bilayer structures. The analysis clearly elucidates the crystal orientation dependence manifested through the anisotropic band structure and the carrier-phonon scattering rates. In the monolayer, the hole mobility in the armchair direction is estimated to be approximately five times larger than in the zigzag direction at room temperature (460 cm 2 /Vs vs. 90 cm 2 /Vs). The bilayer transport, on the other hand, exhibits a more modest anisotropy with substantially higher mobilities (1610 cm 2 /Vs and 760 cm 2 /Vs, respectively). The calculations on the conduction-band electrons indicate a comparable dependence while the characteristic values are generally smaller by about a factor of two. The variation in the saturation velocity is found to be less pronounced.With the anticipated superior performance and the diminished anisotropy, few-layer phosphorene offers a promising opportunity particularly in p-type applications.

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Approaching the Dirac Point in High-Mobility Multilayer Epitaxial Graphene

Cited by 613 publications

References 37 publications

Decoupling and ordering of multilayer graphene on C-face 3C-SiC(111)

Decoupling and ordering of multilayer graphene on C-face 3C-SiC(111)

Controlling doping in graphene through a SiC substrate: A first-principles study

Highly anisotropic electronic transport properties of monolayer and bilayer phosphorene from first principles

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