Abstract-Micron-scale characterization of mechanical stresses is essential for the successful design and operation of many micromachined devices. Here we report the use of Raman spectroscopy to measure the bending stresses in deep reactive-ion etched silicon flexures with a stress resolution of 10 MPa and spatial resolution of 1 m. The accuracy of the technique, as assessed by comparison to analytical and finite-element models of the deformation, is conservatively estimated to be 25 MPa. Implications for the use of this technique in microsystems design are discussed.[995]Index Terms-Microelectromechanical systems (MEMS), microRaman, reliability, stress.
Our results suggest that there is no significant association between TM and testicular cancer, although it is difficult to rule out such an association without further studies with a longer follow-up period.
The decreases in the AMA, AMD, diameter of the medial segment of the LRV and PV of the lateral segment of the LRV, and the increases in the PV of the medial segment of the LRV and the diameter of the lateral segment of the LRV in varicocele patients in all positions suggest the entrapment or impingement of the left renal vein between the aorta and the superior mesenteric artery. This has been defined as the "nutcracker phenomenon", which is known to affect varicocele formation.
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