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The influence of He + ion irradiation on the transport and magnetic properties of epitaxial layers of a diluted magnetic semiconductor (DMS) (In,Fe)Sb, a two-phase (In,Fe)Sb composite and a nominally undoped InSb semiconductor has been investigated. In all layers, a conductivity type conversion from the initial n-type to the ptype has been found. The ion fluence at which the conversion occurs depends on the Fe concentration in the InSb matrix. Magnetotransport properties of the two-phase (In,Fe)Sb layer are strongly affected by ferromagnetic Fe inclusions. An influence of the number of electrically active radiation defects on the magnetic properties of the single-phase In 0.75 Fe 0.25 Sb DMS has been found. At the same time, the results show that the magnetic properties of the In 0.75 Fe 0.25 Sb DMS are quite resistant to significant changes of the charge carrier concentration and the Fermi level position. The results confirm a weak interrelation between the ferromagnetism and the charge carrier concentration in (In,Fe)Sb.

We demonstrate a perspective approach for the fabrication of functional high-quality magnetoplasmonic crystals based on a 2D periodical perforated silver film covered by a thin layer of ferromagnetic metal (Permalloy). The wavelength-angular spectra of the 2D crystals reveal a large number of high-quality resonant features associated with the excitation of surface plasmon-polariton modes of various orders. Due to the presence of a ferromagnetic material on both plasmonic interfaces, pronounced magnetic effects are observed for all excitations and are influenced by the coupling between various modes. The suggested magnetoplasmonic crystal composition with high-quality resonant optical and magneto-optical properties gives perspective for the control over the light propagation as well as for sensor applications.