Robustness of ferromagnetism in (In,Fe)Sb diluted magnetic semiconductor to variation of charge carrier concentration

Kudrin, A. V.; Lesnikov, V. P.; Danilov, Yu. A.; Дорохин, М. В.; Vikhrova, O. V.; Павлов, Д. А.; Usov, Yu. V.; Антонов, И. Н.; Kriukov, R. N.; Zubkov, S. Yu.; Nikolichev, D. E.; Konakov, A. A.; Dudin, Yu. A.; Kuznetsov, Yu. M.; Temiryazeva, M. P.; Соболев, Н. А.

doi:10.1016/j.jmmm.2019.04.088

Cited by 13 publications

(7 citation statements)

References 24 publications

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“…In [8,11] it was assumed that the ferromagnetism of (III,Fe)V DMSs (in particular in (Al,Fe)Sb and (In,Fe)Sb) is associated with the ferromagnetic coupling between the second nearest neighbor Fe atoms via the superexchange interaction. In [12] we revealed a weak interrelation between the ferromagnetism and the charge carrier concentration in (In,Fe)Sb that is fundamentally different from Mndoped III-V DMS.…”

Section: Introductionmentioning

confidence: 84%

High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers

Kudrin

Lesnikov

Danilov

et al. 2020

Semicond. Sci. Technol.

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The layers of a high-temperature novel GaAs:Fe diluted magnetic semiconductor (DMS) with an average Fe content up to 20 at. % were grown on (001) i-GaAs substrates using a pulsed laser deposition in a vacuum. The transmission electron microscopy (TEM) and energy-dispersive x-ray spectroscopy investigations revealed that the conductive layers obtained at 180 and 200 ºC are epitaxial, do not contain any second-phase inclusions, but contain the Fe-enriched columnar regions of overlapped microtwins. The TEM investigations of the non-conductive layer obtained at 250 ºC revealed the embedded coherent Fe-rich clusters of GaAs:Fe DMS. The x-ray photoelectron spectroscopy investigations showed that Fe atoms form chemical bonds with Ga and As atoms with almost equal probability and thus the comparable number of Fe atoms substitute on Ga and As sites. The n-type conductivity of the obtained conductive GaAs:Fe layers is apparently associated with electron transport in a Fe acceptor impurity band within the GaAs band gap. A hysteretic negative magnetoresistance (MR) was observed in the conductive layers up to room temperature (RT). MR measurements point to the out-of-plane magnetic anisotropy of the conductive GaAs:Fe layers related to the presence of the columnar regions. The studies of the magnetic circular dichroism confirm that the layers obtained at 180, 200 and 250 ºC are intrinsic ferromagnetic semiconductors and the Curie point can reach up to at least RT in case of the conductive layer obtained at 200 ºC. It was suggested that in heavily Fe-doped GaAs layers the ferromagnetism is related to the Zener double exchange between Fe atoms with different valence states via an intermediate As and Ga atom.

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Section: Introductionmentioning

confidence: 84%

High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers

Kudrin

Lesnikov

Danilov

et al. 2020

Semicond. Sci. Technol.

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“…Second, ferromagnetism with T C = 40 K was also reported for insulating (Al,Fe)Sb, whose carrier concentration was 3 × 10 17 cm −3 , three to four orders of magnitude smaller than that of (Ga,Mn)As [9]. Third, it was recently shown that the ferromagnetism of (In,Fe)Sb is not significantly influenced by carrier concentration and even by carrier type [33].…”

Section: Discussionmentioning

confidence: 84%

Densities of states in Fe-doped III-V semiconductors: a first-principles study

Sakamoto,

Fujimori

2019

Preprint

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The electronic structures of Fe-doped III-V semiconductors were studied by first-principles supercell calculation. It was found that their electronic structures are basically the same as those of Mn-doped ones except that the extra electron of Fe compared to Mn occupies either majorityspin p-d hybridized antibonding states (t a,↑ ) or minority-spin e states (e ↓ ) and that the center of gravity of the d partial density of states is higher for Fe than for Mn.The present calculations suggest that ferromagnetism appears when the e ↓ states start to be occupied. The band splitting due to s-d hybridization was found to be significantly smaller than the one due to p-d hybridization. This indicates that the s, p-d exchange interaction is not responsible for the high-temperature ferromagnetism of the Fe-doped ferromagnetic semiconductors even in n-type compounds.

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“…Compounds of the III–V semiconductor family have been widely used in different electronic and optoelectronic devices, such as heterostructure bipolar transistors, diode lasers, photodetectors, and electro-optic modulators, among others. − Also, these compounds are promising candidates for solar water splitting, , offering remarkable photon-to-electron energy conversion rates higher in comparison with the silicon-based system . Also, several studies have been carried out impurifying the surface with magnetic materials (Fe, Co, Ni, Mn) to form the so-called diluted magnetic semiconductors (DMS). − …”

Section: Introductionmentioning

confidence: 99%

Insights about AlP (001) Surface Reconstructions: A Density Functional Theory Study

Sánchez Ovalle,

Martínez-Guerra,

Takeuchi

et al. 2023

ACS Appl. Electron. Mater.

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Using first-principles calculations and thermodynamics criteria, we investigated the structural and electronic properties of the AlP (001) surface. We considered 18 different possible surface reconstructions. They were chosen by considering the stable surfaces reported for other III−V semiconductors. According to the results, five stable surface reconstructions were found: at Al-rich conditions, the (2 × 4) mixed dimer and the δ (2 × 6) surfaces, at intermediate conditions, the δ (2 × 4), and β2 (2 × 4) surface reconstructions, and at P-rich conditions, the (2 × 2) P-dimer. Electronic properties were evaluated by calculating the density of states. The results show that the surfaces have semiconductor behavior, except for the (2 × 2) P-dimer, which is metal. Electron localization function (ELF) line profiles demonstrate the covalent nature of the Al−P and P−P bonds, while the Al−Al interaction is metallic. Our results provide insights into the possible surface reconstructions in the AlP compounds. Also, the results suggest that the surfaces are good candidates to be employed in the development of diluted magnetic semiconductors.

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Robustness of ferromagnetism in (In,Fe)Sb diluted magnetic semiconductor to variation of charge carrier concentration

Cited by 13 publications

References 24 publications

High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers

High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers

Densities of states in Fe-doped III-V semiconductors: a first-principles study

Insights about AlP (001) Surface Reconstructions: A Density Functional Theory Study

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