A breakdown of a conventional trench SiC-MOSFET is caused by oxide breakdown at the bottom of the trench. We have fabricated a novel trench SiC-MOSFET with buried p+ regions and demonstrated the high breakdown voltage of 1700 V and the specific on-resistance of 3.5 mΩcm2.
InP wafers of 2 in. diameter have been successfully ground to a thickness of 100 ~m by mechanical grinding with cuptype diamond wheels. This process can be applied, for the first time, to the mass production of InP optoelectronic devices, similar to the technology for GaAs devices based on the wafer-rotating downfeed grinding method. The phenomena occurring in the grinding of InP were similar to those of GaAs, such as a rapid transition between mirror grinding and rough grinding, and a large wafer bow. However, the deformed layer due to the grinding of InP was discovered to be thicker than that of GaAs, because InP is a little more fragile. Still, it was thin enough, less than 1.5 ~m, to be eliminated by slight chemical etching. The finished surface roughness in mirror grinding was also greater, but 0.15 ~m Rmax was obtained with 3 ~m diamond grains, which is small enough to be applied in device fabrications.
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