Radiation tolerant GaAs MESFET with a highly-doped thin active layer grown by OMVPE

Nishiguchi, M.; Hashinaga, T.; Nishizawa, Hideyuki; Hayashi, Hideki; Okazaki, Naoya; Kitagawa, M.; Fujino, Takahiro

doi:10.1109/23.101231

Cited by 13 publications

(7 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The frequency dependence of Rs is attributed to the particular distribution density of interface states [14,28,39]. The series resistance of all irradiated samples has increased .The increase of series resistance after radiation is attributed to the decrease of carriers' mobility and carriers' removal effect [40].…”

Section: Accepted Manuscriptmentioning

confidence: 90%

See 1 more Smart Citation

Effect of 60Co γ-ray irradiation on electrical properties of Ti/Au/GaAs1−xNx Schottky diodes

Teffahi

Hamri

Mostefa

et al. 2016

Current Applied Physics

View full text Add to dashboard Cite

(2016) Effect of Co-60 gamma-ray irradiation on electrical properties of Ti/Au/GaAs1-xNx Schottky diodes. Current Applied Physics, 16 (8). pp. 850-858. ISSN 1878850-858. ISSN -1675 Access from the University of Nottingham repository: http://eprints.nottingham.ac.uk/39520/1/1-s2.0-S156717391630116X-main.pdf Copyright and reuse:The Nottingham ePrints service makes this work by researchers of the University of Nottingham available open access under the following conditions. This article is made available under the Creative Commons Attribution Non-commercial No Derivatives licence and may be reused according to the conditions of the licence. For more details see: http://creativecommons.org/licenses/by-nc-nd/2.5/ A note on versions:The version presented here may differ from the published version or from the version of record. If you wish to cite this item you are advised to consult the publisher's version. Please see the repository url above for details on accessing the published version and note that access may require a subscription. This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting proof before it is published in its final form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. M A N U S C R I P T A C C E P T E D ACCEPTED MANUSCRIPT Effect aek1976@outlook.com Abstract:Current-voltage (I-V), capacitance-voltage-frequency (C-V-f) and conductance-voltagefrequency (G/ω-V-f) measurements at room temperature are used to study 50 kGy 60 Co γ-ray electrical properties irradiation dependence of Ti/Au/GaAs 1-x N x Schottky diodes with 0.2%; 0.4%; 0.8% and 1.2% nitrogen dilution. This γ-ray irradiation induces a permanent damage that has increased ideality factor and series resistance for all samples. It was accompanied by a decrease in Schottky barrier height with nitrogen content up to 0.4%N and remained constant thereafter. Radiation was also found to degrade the reverse leakage current. At high frequency (1 MHz), capacitance and conductance decreased after radiation due to a decrease in net doping concentration. Interface state density and series resistance were determined from C-V-f and G/ω-V-f characteristics using Hill-Coleman methods. Interface states density exponentially decreased with increasing frequency confirming the behavior of interface traps response to ac signal. Series resistance increases after irradiation is attributed to carrier's removal effect and mobility degradation. It has two peaks in the accumulation and inversion region for some diodes (0.4%N, 0.8%N). γ-ray irradiation produced traps levels and recombination centers that reduce relaxation time. An increase in %N content can impede irradiation damage with even some compensation when the percent of diluted nitrogen is high (1.2%N).

show abstract

Section: Accepted Manuscriptmentioning

confidence: 90%

“…The capacitance decreased after irradiation. This is attributed to a decrease in the (N D +N T ) concentration and to a change in dielectric constant at the metal semiconductor interface after gamma irradiation [7,23,24]. The peak capacitance is lower for irradiated diodes.…”

Section: Accepted Manuscriptmentioning

confidence: 99%

Effect of 60Co γ-ray irradiation on electrical properties of Ti/Au/GaAs1−xNx Schottky diodes

Teffahi

Hamri

Mostefa

et al. 2016

Current Applied Physics

View full text Add to dashboard Cite

show abstract

“…All other devices, structures B, C and ion implanted ones, exhibit a similar behavior. Enhanced irradiation performance was also observed in MESFETs with high doping level channel [16]. Beyond this level the degradation becomes significant and the drain saturation current, in most devices, drops quickly to almost 20% of its pre-irradiation value at a fluence ranging from 7 Â 10 11 to 9 Â 10 11 cm ± ±2 , depending on the device structure and the channel fabrication method.…”

Section: I±v Characteristicsmentioning

confidence: 87%

On the ?-Particle Irradiation Effects in MESFETs

Papastamatiou

Arpatzanis

Papaioannou

et al. 2000

phys. stat. sol. (a)

View full text Add to dashboard Cite

a-particle irradiation investigations have been carried out on various structure GaAs metal±semiconductor field-effect transistors. The device characteristics were measured before irradiation and after a-particle irradiation with fluences ranging from 5 Â 10 10 to 3 Â 10 12 cm ± ±2 . The carrier removal rate was found to be independent of the doping level as determined from Schottky diodes and device parameters. Five traps were found to be introduced by irradiation. Two of them were found to determine the temperature dependence of drain current. The threshold voltage shift was modeled taking into account the degradation of the channel carrier removal, the gate barrier height and the channel±substrate space charge region width.

show abstract

“…Therefore the effects of irradiation with highenergy electrons and γ-quanta are expected to be different. The γ-irradiation effects in GaAs both bulk material and epitaxial layers have been studied extensively during the last two decades [1][2][3][4][5][6][7]. It has been reported that lowdose γ-irradiation introduces shallow defects lying about 20 meV below the conduction band edge and acting as donors.…”

Section: Introductionmentioning

confidence: 99%

“…At higher doses deep traps are introduced lying about 0.13 eV below the conduction band edge. The charge carrier removal in this case can be described by the following relation [6]…”

Section: Introductionmentioning

confidence: 99%

Radiation hardness of AlAs/GaAs-based resonant tunneling diodes

Belyaev¹,

Belyaev²,

Конакова³

et al. 1999

Semicond. Phys. Quantum Electron. Optoelectron.

View full text Add to dashboard Cite

The total dose effects of 60 Co γ-radiation on the electrical properties of double-barrier Resonant Tunneling Diodes have been studied. The devices manifest enhanced radiation hardness and conserve their operating parameters up to doses of 2×10 9 rad. It is shown that all changes in the current-voltage characteristics stem from the effect of ionizing radiation on the undoped layers. The radiation-stimulated diffusion of the heteropair components in the contact region is shown to be important for the voltage drop distribution.

show abstract

Radiation tolerant GaAs MESFET with a highly-doped thin active layer grown by OMVPE

Cited by 13 publications

References 8 publications

Effect of 60Co γ-ray irradiation on electrical properties of Ti/Au/GaAs1−xNx Schottky diodes

Effect of 60Co γ-ray irradiation on electrical properties of Ti/Au/GaAs1−xNx Schottky diodes

On the ?-Particle Irradiation Effects in MESFETs

Radiation hardness of AlAs/GaAs-based resonant tunneling diodes

Contact Info

Product

Resources

About