This paper presents a low-power and low-area variant of the recently proposed parallel regeneration technique (PRT), thus providing an improved technique for the regeneration of long integrated intexronnects. Taking advantage of the particular design of the regenerator in PRT, we propose a variant (called VPRT), where t' regenerators along the interconnection have a variable size. Electrical simulations involving different interconnection lengths and technological processes are carried out to show that the interconnection delay, obtained with VPRT, is smaller than with PRT. A performance analysis combining area (A), delay 0, and power dissipation (P) shows that, VPRT leads to an ATP metric at least 4 times better than with PRT.
L INIRODUCT'IONIn general, delay on a long integrated interconnection grows as the square of its length. F " o r e , as component sizes are shrunk [ 11 [21, switching delay of logic decreases, but the size of the chips tend to grow. Due to the inaeased complexity of the systems being integrated, interconnection delays grow and they become a critical performance bottleneck.InW. complex VLSI circuits increasingly rely on long interconnections [31.In previous work [4] [51 [61, different structures were pre posed to solve this problem. In [a. we suggested a regeneration technique which was shown to achieve an AT performance metric lower than conventional methods (RID), based on repetitively inserted drivers [SI. In this paper, we propose a low-power and low-area variant of this technique, called m. We also propose a performance analysis of this regenerating structure under a more general metric: an p;Tp metric (A for area, T far delay and P for power). 0-7803-2428-5195 $4.00 0 1995 IEEE 50 U. CRcUrr DESCRIPTIONThe regeneration structure (Fig. 1) introduced in [61 uses a regenerator (transistors T, through T,) which is inserted at regular intervals in the interconnection to be regenerated, thus dividing the interumn~tion into segments. Let us assume that the line is first precharged to V,, by means of transistors T,, controlled by a globally available and properly deskewed clock signal. Distributing such a signal with low skew and characterizing this skew has been discussed elsewhere [71. In this case, only the discharge process needs to be analyzed. since the propagation delay of a logical "1" is negligible. The signal to be sent through the intemnnection is then presented to the gate of the emitter transistor. T,, which initiates the discharge of the line at point B. At different points along the interconnection, a pull-down transistor (T3) accelerates this discharge, as soon as a sense gate detects this transition (wansistors T2 and T4). At the end of the interconnection, a detector is used in order to detect the signal as early as possible.Due to the complexity af Fig.1 circuit, which follows from the high degree of coupling berween stages, the analysis done in [a was simplified firstly by assuming that the regenexators are regularly spaced, and secondly by using heuristics, so that the d...