The effect of γ‐irradiation on the degradation of p‐GaP‐n‐GaP red light emitting diodes (LED's) is studied. It is shown that after the irradiation to a dose of 1.5 × 1017 γ/cm2 the LED's degrade, a decrease of red electroluminescence maximum (λ = 0.675 μm, T = 77 K) by a factor of about 3 to 6 is observed. A following isochronal annealing of the irradiated diodes over the temperature interval from 100 to 300 °C leads to a partial recovery of the starting luminescence properties of the diodes. Similar effect is also observed when forward currents flow through the diode (j = 10−1 to 10−2 A/cm2) at temperatures 77 and 300 K. The data obtained are explained by defects (Frenkel type) which act as non‐radiative centres.
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