Synthesis and growth of carbon nanotubes (CNTs) from C 2 H 2 by thermal chemical vapour deposition (TCVD) using a mixture of different gases were investigated. A thin film of nickel was coated as catalyst on silicon substrates by ion beam sputtering technique. Various parameters such as thickness of oxide layer and time, as well as reduction temperature were investigated in view of obtaining the best conditions for CNTs growth. C 2 H 2 was very effective as carbon feedstock and NH 3 pretreatments were crucial steps towards obtaining a high density of nucleation sites for CNTs growth by inhibiting amorphous carbon generation in the initial stage of the synthesis. The substrate oxide layer was analysed by secondary ion mass spectrometry. The prepared CNTs were confirmed by Raman spectroscopy and were further characterised using scanning electron microscopy and transmission electron microscopy.
The growth behavior of carbon nanotubes synthesized from C 2 H 2 at the temperature range of 700 to 900°C and using thermal chemical vapor deposition (TCVD) method has been investigated. Thin films of nickel (Ni) catalyst, were coated on SiO 2 substrates by ion beam sputtering technique. The formation of catalytic nickel nanoparticles was much increased when using NH 3 as the environment gas which implies both the formation and the separation of graphitic layer. Scanning electron microscopy (SEM) and Raman results show that the temperature of growth is the effective parameter on the formation of carbon nanotubes (CNTs).
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