The interactions of TiCl4, Sill4, and HC1 with St(100) have been investigated by temperature programmed desorption (TPD) with the goal of better understanding the initial stages of TiSi2 chemical vapor deposition for circuit metallization and wafer etching with HC1/H2. Coadsorption experiments with TIC1, and Sill4 show that under most conditions H2 and SiCI~ are the main desorption products, with Ti being left behind on the surface. HC1 is a minor product. However, at sufficiently low exposures of either TIC14 or Sill4, the desorption of SIC12 or H2, respectively, is inhibited in favor of HC1. A kinetic model involving formation of an HC1 complex at defects has been formulated which explains the results quantitatively. HC1 adsorption gives rise to the principal desorption products SIC12 and H2, with HCI as a minor product. The kinetic behavior can also be explained quantitatively with the proposed model. Implications for TiSi2 growth are discussed with reference to possible growth temperatures and source gas pressures. The mechanism for etching by HC1 is further elucidated.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 155.69.4.4 Downloaded on 2015-06-15 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 155.69.4.4 Downloaded on 2015-06-15 to IP
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