Optical pump–terahertz (THz) probe spectroscopy was used for investigation of electron dynamics in In0.53Ga0.47As films irradiated by heavy ions (Br+) at doses from 109 to 1012 cm−2. From the transient conductivity spectra, photoexcited electron lifetimes and mobilities were determined; their decrease is observed upon increase in the irradiation dose. At the highest dose, the material combines an electron lifetime of 0.46 ps with an exceptionally high photoexcited electron mobility of 3600 cm2 V−1 s−1. This last value is even higher than those reported for low-temperature-grown GaAs with similar electron lifetime. Due to its rather low band gap, heavy-ion irradiated In0.53Ga0.47As shows promising properties for the development of THz systems using telecommunication based technology.
International audienceWe report the electro-optic detection of terahertz (THz) pulses in a 4-N,N-dimethylamino-4′-N′-methyl-stilbazolium tosylate crystal (DAST) using optical phase detection technique and femtosecond optical pulses at telecom wavelength. A THz time-domain spectroscopy system based on 1.55 μm wavelength fiber laser pulses that integrates an ion-irradiated In0.53Ga0.47As photoconductive antenna as the emitter and a DAST electro-optic crystal as the detector is shown to provide a detection bandwidth of 5 THz
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