An Electron-Ion Collider (EIC) has been proposed to further explore the strong force and QCD, focusing on the structure and the interaction of gluon-dominated matter. A generic detector R&D program (EIC PID consortium) for the particle identification in EIC experiments was formed to explore technologically advanced solutions in this scope. In this context two Ring Imaging Cherenkov (RICH) counters have been proposed: a modular RICH detector which consists of an aerogel radiator, a Fresnel lens, a mirrored box, and pixelated photon sensor; a dual-radiator RICH, consisting of an aerogel radiator and C 2 F 6 gas in a mirror-focused configuration. We present the simulations of the two detectors and their estimated performance.
For a successful point-contact spectroscopy (PCS) measurement, metallic tips of proper shape and smoothness are essential to ensure the ballistic nature of a point-contact junction. Until recently, the fabrication of Au tips suitable for use in point-contact spectroscopy has remained more of an art involving a trial and error method rather than an automated scientific process. To address these issues, we have developed a technique with which one can prepare high quality Au tips reproducibly and systematically. It involves an electronic control of the driving voltages used for an electrochemical etching of a gold wire in a HCl-glycerol mixture or a HCl solution. We find that a stopping current, below which the circuit is set to shut off, is a single very important parameter to produce an Au tip of desired shape. We present detailed descriptions for a two-step etching process for Au tips and also test results from PCS measurements using them.
Optical modulation bandwidth for a semiconductor diode laser is governed by the thermally limited spontaneous radiative recombination lifetime, τrec, photon lifetime, τp, and cavity photon density for stimulated recombination. Thus, temperature dependent recombination lifetime is a critical parameter for the limitation of photonic device operations. Here, we develop a microwave extraction method to accurately determine the radiative recombination and photon lifetimes over a temperature range up to 85 °C through the equivalent circuit modeling based on the measured microwave scattering-parameters. For an 850 nm oxide-vertical cavity surface emitting laser with error free data transmission capability over 50 Gb/s, the extracted lifetimes are τrec = 0.1778 ns and τp = 4.2 ps at 25 °C and τrec = 0.2445 ns and τp = 4.8 ps at 85 °C.
Data are presented for a low threshold n-p-n vertical cavity transistor laser (VCTL) with improved cavity confinement by trench opening and selective oxidation. The oxide-confined VCTL with a 6.5 × 7.5 μm2 oxide aperture demonstrates a threshold base current of 1.6 mA and an optical power of 150 μW at IB = 3 mA operating at −80 °C due to the mismatch between the quantum well emission peak and the resonant cavity optical mode. The VCTL operation switching from spontaneous to coherent stimulated emission is clearly observed in optical output power L-VCE characteristics. The collector output IC–VCE characteristics demonstrate the VCTL can lase in transistor's forward-active mode with a collector current gain β = 0.48.
We have fabricated a high speed single mode microcavity laser of the form of oxide-confined vertical cavity surface emitting laser (VCSEL) and achieved an ultralow threshold current (ITH = 0.13 mA at 20 °C) with lasing wavelength at 837 nm. The optical spectrum of the microcavity VCSEL exhibits a mode spacing of 3.1 nm, which is corresponding to an optical modal cavity dimension of 2.5 μm. The device exhibits an enhanced modulation bandwidth of 22.6 GHz and a thermal noise limited laser intensity noise (electrical power spectral density of laser intensity noise below the thermal noise floor −174 dBm/Hz) as a consequence of low power laser operation and reduced mode competition in the microcavity.
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