Microwave extraction method of radiative recombination and photon lifetimes up to 85 °C on 50 Gb/s oxide-vertical cavity surface emitting laser

Abstract

Optical modulation bandwidth for a semiconductor diode laser is governed by the thermally limited spontaneous radiative recombination lifetime, τrec, photon lifetime, τp, and cavity photon density for stimulated recombination. Thus, temperature dependent recombination lifetime is a critical parameter for the limitation of photonic device operations. Here, we develop a microwave extraction method to accurately determine the radiative recombination and photon lifetimes over a temperature range up to 85 °C through the equivalent circuit modeling based on the measured microwave scattering-parameters. For an 850 nm oxide-vertical cavity surface emitting laser with error free data transmission capability over 50 Gb/s, the extracted lifetimes are τrec = 0.1778 ns and τp = 4.2 ps at 25 °C and τrec = 0.2445 ns and τp = 4.8 ps at 85 °C.

Accelerated Hot-Carrier Cooling in MAPbI3 Perovskite by Pressure-Induced Lattice Compression

“…Slow HCC is desired for thermoelectric devices 10 , and hot carrier solar cells 11,12,13 where extracting carriers before they have cooled could enables breaking the thermodynamic limit for single-junction solar cells. Emissive applications such as lasers 14 , singlephoton sources 15,16 and optical modulators 17 require short HCC time for efficient radiative recombination and to prevent carrier trapping. In particular for lasers, it is quintessential to understand the electronic properties at the high-carrier density required to obtain lasing.…”

Accelerated Hot-Carrier Cooling in MAPbI3 Perovskite by Pressure-Induced Lattice Compression

“…Slow HCC is desired for thermoelectric devices 7 and hot-carrier solar cells 8 where extracting carriers before they have cooled could enable breaking the thermodynamic limit for single-junction solar cells. Emissive applications such as lasers, 9 single-photon sources, 10 and optical modulators 11 require short HCC times for efficient radiative recombination and to prevent carrier trapping. In particular for lasers, understanding the electronic properties at high carrier density required to obtain lasing is essential.…”

Recent Advances in 850 nm VCSELs for High-Speed Interconnects

“…Apart from enhanced beam qualities and fast modulation bandwidths, VCSELs hold leading positions due to the lower cost of processing, scalability into arrays, thermal stability (i.e., wide operating temperature range) [21][22][23], wavelength stability [22,24], etc.…”

“…Due to the above-mentioned intrinsic and extrinsic influences in VCSELs, it is of utter importance to study the transfer functions of VCSELs and to investigate the design and optimization criteria. It is worth repeating that a VCSEL's overall E-O responses are the superposition of the intrinsic laser responses and the extrinsic electrical RC responses [14,21,92,93]. The overall E-O response of a VCSEL can be characterized by a three-pole transfer function, Equation (1), which is the superposition of the two-pole intrinsic and the one-pole electrical transfer functions [14,92]:…”

“…Figure 11 depicts an equivalent circuit of an oxide-confined VCSEL with the circuit components labeled on the schematic cross-sectional view in Figure 2. The smallsignal circuit model portrays the microwave performance of VCSELs [21,93,[99][100][101][102][103][104][105]. A VCSEL is biased with a current bias, I tot , and the pumping current flowing through the intrinsic active-region laser junction is denoted as I a .…”