Metal organic chemical vapor deposition of InGaAs/InP multi-quantum-well in nanoscale V-grooved trenches on Si (001) substrate was studied using the aspect ratio trapping method. A high quality GaAs/InP buffer layer with two convex {111} B facets was selectively grown to promote the highly uniform, single-crystal ridge InP/InGaAs multi-quantum-well structure growth. Material quality was confirmed by transmission electron microscopy and room temperature micro-photoluminescence measurements. This approach shows great promise for the fabrication of photonics devices and nanolasers on Si substrate.
By using GaAs as both a saturable absorber and an output coupler, a laser-diode pumped passively Q-switched Nd:LuVO 4 laser has been realized for the first time to our knowledge. The maximum laser output power of 1.91 W has been obtained at the incident pump power of 12.7 W, corresponding to an optical conversion efficiency of 15%. At this incident pump power, the minimum the pulse width of 3.8 ns has also been obtained at the pulse repetition rate of 952 kHz with peak power of 482 W.
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