We have studied diffusion of Ge into subsurface layers of Si(100). Auger electron diffraction measurements show Ge in the fourth layer after submonolayer growth at temperatures as low as 500 degrees C. Density functional theory predictions of equilibrium Ge subsurface distributions are consistent with the measurements. We identify a surprisingly low energy pathway resulting from low interstitial formation energy in the third and fourth layers. Doping significantly affects the formation energy, suggesting that n-type doping may lead to sharper Si/Ge interfaces.
Determination of alkali atoms adsorbating location and of the geometry of adsorption of simple molecules on Cu(111) surface by xray photoelectron diffraction (XPD) AIP Conf.Chemical discrimination of bulk and interface Ca 2p x-ray photoelectron diffraction modulations is used to identify three growth regimes during the initial stages of CaF, epitaxy on Si( 111). Low flux, high temperature conditions produce island growth atop a nonwetting, chemically reacted Ca-F interface layer. Changing the growth kinetics by increasing the flux produces more laminar growth. Lowering the substrate temperature produces a more stoichiometric CaP, interface layer that results in immediate wetting and laminar growth.
The thickness uniformity and the spatial distribution of lattice relaxation in thin (,8 nm) CaF 2 /Si(111) films, observed with photoelectron spectroscopy and transmission electron microscopy, are seen to depend strongly on the initial nucleation kinetics. We develop a general model for heteroepitaxial growth that explains both these and literature results. Terrace or step nucleation leads to laminar films, although with different relaxation patterns; combined step and terrace nucleation leads to rough films due to different upper-layer nucleation rates on the differently sized islands.
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