In this article, we investigate the dry etching of GaInP / GaAs based material system using an inductively coupled plasma ͑ICP͒ etching system. In a view to develop a suitable ICP process for the etching of aluminum-free material, ridge waveguides have been fabricated and the effects of the ICP parameters have been assessed. The coil power and the platen power have been varied at constant pressure and temperature for a chlorine-based process. The surface quality, sidewall profile, and selectivity have been reported. We also demonstrate the optimization of the chlorine-based process for deep etching and its subsequent implementation in photonic band gap device fabrication for 1.55 m optical applications. The optimized process has been shown to provide a high aspect ratio and a good selectivity for 250 nm diam holes with a depth of 3 m in the GaInP / GaAs material system. The influence of the ICP parameters on this material system have been analyzed mainly by scanning electron microscopy with particular attention drawn to the ways of reducing trenching, an effect commonly associated with ICP etching.

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To maintain the same beam quality as that of a single emitter and to be close to diffraction limit, we have combined a phase corrected array, emitting at lambda = 975 nm, coherently using the Talbot effect. First, to improve the beam quality of the array, a phase correcting system was added. The FWHM divergences of the array (which is approximately the same as that of the single emitter since the emitters within the array are not optically coupled to each other) were reduced from 34 degrees to 0.17 degrees in the fast axis and from 3.5 degrees to 0.7 degrees in the slow axis at 6 A. Then, to be close to the diffraction limit, we have combined this corrected array coherently using the Talbot effect. We have obtained a quasi-monolobe slow axis far field profile for the in-phase mode with a central peak divergence of only 0.27 degrees at 1.5 A, 315 mW under cw operation, and of only 0.20 degrees at 2.5 A, 787 mW under pulsed operation. To our knowledge, this is the first demonstration of coherent coupling of a corrected tapered laser diode array in an external Talbot cavity.