2003
DOI: 10.1049/el:20030720
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1 W high brightness index guided tapered laser at 980 nm using Al-free active region materials

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Cited by 32 publications
(14 citation statements)
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“…The active layer consists of a strained GaInAs quantum well embedded in a large optical cavity. The lateral structure of the emitters is a tapered ridge with a narrow angle (< 1°) and an overall cavity length of 2.5 mm [5]. The tapered design allows high power emission together with single transverse mode operation thanks to the widened active section.…”
Section: Resultsmentioning
confidence: 99%
“…The active layer consists of a strained GaInAs quantum well embedded in a large optical cavity. The lateral structure of the emitters is a tapered ridge with a narrow angle (< 1°) and an overall cavity length of 2.5 mm [5]. The tapered design allows high power emission together with single transverse mode operation thanks to the widened active section.…”
Section: Resultsmentioning
confidence: 99%
“…The details of the semiconductor layers are given in [21]. The model of the tapered-laser bar combines electrical and optical models.…”
Section: Electrical and Optical Numerical Modeling Of The Tapered-lasmentioning
confidence: 99%
“…This laser array was provided by Alcatel Thales III-V Lab (Palaiseau, France) [21]. In the slow-axis direction, the 10 beams propagate freely inside the external cavity.…”
Section: A Self-imaging Talbot External Cavitymentioning
confidence: 99%
“…The BA-LD has an emitter width of 100 µm, a cavity length of 1.5 mm, and an emission wavelength of 975 nm. Details of the epitaxial structure are given in [52]. The front and back facets are antireflection (AR) and high reflection (HR) coated, respectively.…”
Section: B Asymmetric Feedback External Cavity Lasermentioning
confidence: 99%