Well-controlled population of dislocations are introduced in 4H-SiC by bending in cantilever mode and annealing between 400 and 700°C. The introduced defects consist of double stacking faults, each bound by a pair of 30° Si(g) partial dislocations, and the expansion of which is asymmetric. The velocity of each individual 30° Si(g) pair is directly measured as a function of stress and temperature on the surface of samples etched after deformation. The activation energies of the 30° Si(g) partial dislocation pairs are strongly stress dependent, ranging between 1.25 and 1.7eV. These values are lower than the ones derived from plasticity experiments. This is probably because 30° Si(g) pairs and double stacking faults are generated in N-doped 4H-SiC (N=2×1018cm−3), with their development being promoted by quantum well action.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.