Effect of negative bias voltage on a-C:H films deposited in electron cyclotron resonance plasma

Physical and chemical properties of amorphous hydrogenated carbon films deposited by PECVD in a low self-bias range

“…Fig. 5 shows that E g progressively decreases from 2.6 to 1.3 eV, as the self-bias increases from 0 to 400 V. This behavior is consistent with the Tauc optical gap measured on a-C:H coatings deposited by MW-RF PECVD [16].…”

Covalent grafting of organic molecular chains on amorphous carbon surfaces

“…Hydrogenated amorphous carbon (a-C:H) films (Table 1) were obtained either by plasma decomposition of CH 4 in a dual ECR-RF plasma (PECVD) at two different ion energies E ION (30 and 600 eV, for PLC:H and DLC:H, respectively) [4] or by graphite sputtering (PVD) in Ar/ 10% H 2 mixtures at 1 Pa [5]. The bulk H content was obtained by Elastic Recoil Detection analysis for the PLC:H film annealed at 500°C (17 H at.%), for the DLC:H film annealed at 200°C (20 ± 5 H at.%) and for the as-deposited PVD film (22 ± 2 H at.%).…”

The chemical composition and bonding structure of B–C–N–H thin films deposited by reactive magnetron sputtering

“…The peak located at a wave number of 1130 cm −1 (designated as the P peak) corresponds to the intraicosahedral mode in polycrystalline B 4 C (pc-B 4 C) materials, [35] whereas the peak at 1270 cm −1 is usually attributed to nanocrystalline diamond. [36] In the boron carbon nitride, the peak at 1270 cm −1 is absent. This feature explains that nitrogen is in the form of C-N bonds with the tetrahedrally bonded carbon atoms (designated as the N peak).…”