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In this work, we report experiments on SONOS memory cells aimed to investigate the vertical position and the nature of the charge trapped in the gate stack during Program/Erase (P/E) cycling. To this purpose a new experimental setup has been developed to accurately detect the amount of injected charge and the consequent threshold voltage shift. The results, confirmed by different measurement techniques, show that the position of the charge centroid during program and erase operation is quite insensitive to the injection conditions. Moreover, we investigate by means of carrier separation experiments the role of the different type of carriers during program and erase operation of SONOS cells.

A new characterization technique and an improved model for charge injection and transport through ONO gate stacks are used to investigate the program/retention sequence of silicon nitride-based (SONOS/TANOS) nonvolatile memories. The model accounts for drift-diffusion transport in the conduction band of silicon nitride (SiN). A priori assumptions on the spatial distribution of the charge at the beginning of the program/retention operations are not needed. We show that the carrier transport in the SiN layer impacts the spatial distribution of the trapped charge and, consequently, several aspects of program and retention transients. A few model improvements allow us to reconcile the apparent discrepancy between the values of silicon nitride trap energies extracted from program and retention experiments, thus reducing the number of model parameters